NPN Bipolar Transistor Guangdong Hottech 2SC1623 L5 with 200mW Power Dissipation and SOT23 Package
Key Attributes
Model Number:
2SC1623 L5
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
250MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
2SC1623 L5
Package:
SOT-23
Product Description
Product Overview
The 2SC1623 is an NPN bipolar transistor designed for surface mount applications. It features high DC current gain (hFE=200 Typ) and a high collector-emitter voltage (VCEO=50V). This device is complementary to the 2SA812 and is housed in a compact SOT-23 package.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Origin: China
- Material: Molded Plastic
- UL Flammability Classification: 94V-0
- Complementary Device: 2SA812
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Base Voltage | VCBO | 60 | V | |
| Collector-Emitter Voltage | VCEO | 50 | V | |
| Emitter-Base Voltage | VEBO | 5 | V | |
| Collector Current | IC | 100 | mA | |
| Collector Power Dissipation | PC | 200 | mW | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| Collector-base breakdown voltage | V(BR)CBO | 60 | V | IC=100uAIE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | 50 | V | IC=1mAIB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=100uAIC=0 |
| Collector cut-off current | ICBO | 0.1 | uA | VCB=60V, IE=0 |
| Emitter cut-off current | IEBO | 0.1 | uA | VEB=5V, IC=0 |
| DC current gain | hFE | 90-600 | VCE=6V, IC=1mA | |
| Collector-emitter saturation voltage | VCE(sat) | 0.3 | V | IC=100mAIB=10mA |
| Base-emitter saturation voltage | VBE(sat) | 1 | V | IC=100mAIB=10mA |
| Transition frequency | fT | 250 | MHz | VCE=6V, IC=10mA |
2409302202_Guangdong-Hottech-2SC1623-L5_C181166.pdf
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