Fast Switching N Channel MOSFET 100V GOODWORK 40N10 with Low Gate Charge and Excellent Cdvdt Effect
Key Attributes
Model Number:
40N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
40A
RDS(on):
20mΩ@10V;23mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
23pF
Output Capacitance(Coss):
320pF
Pd - Power Dissipation:
43.7W
Input Capacitance(Ciss):
822pF
Gate Charge(Qg):
40.6nC@10V
Mfr. Part #:
40N10
Package:
TO-252
Product Description
Product Overview
The 40N10 is a N-Ch 100V Fast Switching MOSFET featuring Super Low Gate Charge and Excellent Cdv/dt effect decline. It utilizes Advanced high cell density Trench technology, offering a high-performance solution for various applications. This device is also available as a Green Device.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit | |
| Absolute Maximum Ratings | |||||||
| Drain-Source Voltage | VDS | 100 | V | ||||
| Gate-Source Voltage | VGS | ±20 | V | ||||
| Continuous Drain Current, VGS @ 10V (TC=25) | ID@TC=25 | VGS @ 10V | 40 | A | |||
| Continuous Drain Current, VGS @ 10V (TC=100) | ID@TC=100 | VGS @ 10V | 20 | A | |||
| Pulsed Drain Current | IDM | 80 | A | ||||
| Single Pulse Avalanche Energy | EAS | 40 | mJ | ||||
| Avalanche Current | IAS | 30 | A | ||||
| Total Power Dissipation (TC=25) | PD@TC=25 | 43.7 | W | ||||
| Storage Temperature Range | TSTG | -55 | 150 | ||||
| Operating Junction Temperature Range | TJ | -55 | 150 | ||||
| Thermal Resistance Junction-ambient | RJA | --- | 50 | /W | |||
| Thermal Resistance Junction-Case | RJC | --- | 3.0 | /W | |||
| Electrical Characteristics (TJ = 25C, unless otherwise noted) | |||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250A | 100 | - | - | V | |
| Gate-body Leakage current | lGSS | VDS = 0V, VGS = ±20V | - | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | TJ=25C, VDS =100V, VGS = 0V | - | 1 | μA | ||
| Zero Gate Voltage Drain Current | IDSS | TJ=100C, VDS =100V, VGS = 0V | - | 100 | μA | ||
| Gate-Threshold Voltage | VGS(th) | VDS = VGS, ID = 250μA | 1.0 | 3.0 | V | ||
| Drain-Source on-Resistance | RDS(on) | VGS = 10V, ID = 8 A | 20 | 28 | mΩ | ||
| Drain-Source on-Resistance | RDS(on) | VGS = 4.5V, ID = 4 A | 23 | 31 | mΩ | ||
| Forward Transconductance | gfs | VDS=5V , ID=5A | 12 | - | S | ||
| Dynamic Characteristics | |||||||
| Input Capacitance | Ciss | VDS = 15V, VGS =0V, f =1MHz | 822 | - | pF | ||
| Output Capacitance | Coss | VDS = 15V, VGS =0V, f =1MHz | 320 | - | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = 15V, VGS =0V, f =1MHz | 23 | - | pF | ||
| Gate Resistance | Rg | f =1MHz | 1.3 | - | Ω | ||
| Switching Characteristics | |||||||
| Total Gate Charge | Qg | VGS = 10V, VDS = 50V, ID=5A | 40.6 | - | nC | ||
| Gate-Source Charge | Qgs | VGS = 10V, VDS = 50V, ID=5A | 8 | - | |||
| Gate-Drain Charge | Qg d | VGS = 10V, VDS = 50V, ID=5A | 6.7 | - | |||
| Turn-On Delay Time | td(on) | VGS =10V, VDD =50V, RG = 3Ω, ID= 5A | 8.7 | - | ns | ||
| Rise Time | tr | VGS =10V, VDD =50V, RG = 3Ω, ID= 5A | 41 | - | ns | ||
| Turn-Off Delay Time | td(off) | VGS =10V, VDD =50V, RG = 3Ω, ID= 5A | 40 | - | ns | ||
| Fall Time | tf | VGS =10V, VDD =50V, RG = 3Ω, ID= 5A | 32 | - | ns | ||
| Drain-Source Body Diode Characteristics | |||||||
| Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | 1.2 | V | ||
| Continuous Source Current | IS | TC=25°C | - | - | 40 | A | |
2506041705_GOODWORK-40N10_C49023428.pdf
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