synchronous buck converter MOSFET GOODWORK 150N03NF with low RDS ON and high pulsed drain current rating
Key Attributes
Model Number:
150N03NF
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
RDS(on):
2.9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
718pF
Number:
1 N-channel
Output Capacitance(Coss):
1.022nF
Input Capacitance(Ciss):
6.272nF
Pd - Power Dissipation:
87W
Gate Charge(Qg):
143nC@10V
Mfr. Part #:
150N03NF
Package:
PDFN5x6-8
Product Description
Product Overview
The 150N03NF is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, ensuring efficient operation. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Certifications: RoHS, Green Device Available
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit | |
| Absolute Maximum Ratings | |||||||
| VDS | Drain-Source Voltage | 30 | V | ||||
| VGS | Gate-Source Voltage | ±20 | V | ||||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 150 | A | ||||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 80 | A | ||||
| IDM | Pulsed Drain Current2 | 450 | A | ||||
| EAS | Single Pulse Avalanche Energy3 | 580 | mJ | ||||
| IAS | Avalanche Current | 60 | A | ||||
| PD@TC=25 | Total Power Dissipation4 | 87 | W | ||||
| TSTG | Storage Temperature Range | -55 | 150 | ||||
| TJ | Operating Junction Temperature Range | -55 | 150 | ||||
| Thermal Data | |||||||
| RJA | Thermal Resistance Junction-Ambient | 62 | /W | ||||
| RJC | Thermal Resistance Junction-Case1 | 2.1 | /W | ||||
| Off Characteristics | |||||||
| BVDSS | Drain to source breakdown voltage | VGS=0V, ID=250uA | 30 | V | |||
| ΔBVDSS / ΔTJ | Breakdown voltage temperature coefficient | ID=250uA, referenced to 25 | 0.02 | V/ | |||
| IDSS | Drain to source leakage current | VDS=30V, VGS=0V | 1 | uA | |||
| VDS=24V, TJ=125 | 50 | uA | |||||
| IGSS | Gate to source leakage current, forward | VGS=20V, VDS=0V | 100 | nA | |||
| Gate to source leakage current, reverse | VGS=-20V, VDS=0V | -100 | nA | ||||
| On Characteristics | |||||||
| VGS(TH) | Gate threshold voltage | VDS=VGS, ID=250uA | 1.2 | 2.4 | V | ||
| RDS(ON) | Drain to source on state resistance | VGS=4.5V, ID=30A,TJ=25 | 2.2 | 4.8 | m | ||
| VGS=10V, ID=30A,TJ=25 | 1.5 | 2.9 | m | ||||
| VGS=10V, ID=30A,TJ=125 | 2.5 | m | |||||
| Gfs | Forward transconductance | VDS=5V, ID=30A | 73 | S | |||
| Dynamic Characteristics | |||||||
| Ciss | Input capacitance | VGS=0V, VDS=15V, f=1MHz | 6272 | pF | |||
| Coss | Output capacitance | 1022 | pF | ||||
| Crss | Reverse transfer capacitance | 718 | pF | ||||
| td(on) | Turn on delay time | VDS=15V, ID=30A, RG=4.7, VGS=10V (note 4) | 20 | ns | |||
| tr | Rising time | 58 | ns | ||||
| td(off) | Turn off delay time | 158 | ns | ||||
| tf | Fall time | 77 | ns | ||||
| Qg | Total gate charge | VDS=24V, VGS=10V, ID=30A , IG=5mA (note 4) | 143 | nC | |||
| Qgs | Gate-source charge | 17 | |||||
| Qgd | Gate-drain charge | 43 | |||||
| Rg | Gate resistance | VDS=0V, Scan F mode | 4.2 | ||||
| Source to drain diode ratings characteristics | |||||||
| IS | Continuous source current | Integral reverse p-n Junction diode in the MOSFET | 110 | A | |||
| ISM | Pulsed source current | 440 | A | ||||
| VSD | Diode forward voltage drop. | IS=45A, VGS=0V | 1.4 | V | |||
| trr | Reverse recovery time | IS=30A, VGS=0V, dIF/dt=100A/us | 26 | ns | |||
| Qrr | Reverse recovery charge | 10 | nC | ||||
2408021727_GOODWORK-150N03NF_C21713990.pdf
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