Surface Mount Schottky Diode Guangdong Hottech 1N5817W With Low Capacitance And Transient Protection
Key Attributes
Model Number:
1N5817W
Product Custom Attributes
Reverse Leakage Current (Ir):
25A
Non-Repetitive Peak Forward Surge Current:
25A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
20V
Voltage - Forward(Vf@If):
750mV@3.0A
Current - Rectified:
1A
Mfr. Part #:
1N5817W
Package:
SOD-123
Product Description
SCHOTTKY BARRIER DIODE
This Schottky Barrier Diode features a low forward voltage, high frequency inverter capability, and a small surface mount device package (SOD-123). It includes a PN junction guard ring for transient and ESD protection and low capacitance, making it suitable for various electronic applications.
Product Attributes
- Brand: HOTTECH (GUANGDONG HOTTECH INDUSTRIAL CO.,LTD)
- Case Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Weight: 0.005 grams (approximate)
Technical Specifications
| Parameter | Symbol | Unit | 1N5817W | 1N5818W | 1N5819W | Test Conditions |
|---|---|---|---|---|---|---|
| Peak Reverse Voltage | VR | V | 40 | |||
| RMS Reverse Voltage | VR(RMS) | V | 28 | |||
| Forward Current | IF | A | 1 | |||
| Non-Repetitive Peak Forward Surge Current | IFSM | A | 25 | @ t = 8.3 ms | ||
| Power Dissipation | PD | mW | 500 | (TA = 25C) | ||
| Thermal Resistance From Junction To Ambient | RJA | C/W | 200 | |||
| Junction Temperature | TJ | C | 125 | |||
| Storage Temperature | TSTG | C | -55 ~+150 | |||
| Maximum forward voltage | VF | V | 0.450 | 0.550 | 0.600 | IF = 1.0A |
| Maximum forward voltage | VF | V | 0.750 | 0.875 | 0.900 | IF = 3.0A |
| Maximum reverse breakdown voltage | V | 20 | 30 | 40 | IR=1mA | |
| Maximum reverse current | IR | mA | 1.0 | 1.0 | 1.0 | VR=20V (1N5817W), VR=30V (1N5818W), VR=40V (1N5819W) |
| Type junction capacitance | CT | pF | 120 | 120 | 120 | VR = 4.0V, f = 1MHz |
2507111630_Guangdong-Hottech-1N5817W_C49238183.pdf
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