Low RDS on 20V MOSFET GOODWORK 3439KDW GK Suitable for Battery Management and Portable Electronics

Key Attributes
Model Number: 3439KDW-GK
Product Custom Attributes
Mfr. Part #:
3439KDW-GK
Package:
SOT-363
Product Description

Product Overview

The 3439KDW is a 20V N-Channel and P-Channel MOSFET featuring a surface mount package, low RDS(on), and operation at low logic level gate drive. It is ESD protected and suitable for load/power switching, interfacing, and battery management in ultra-small portable electronics.

Product Attributes

  • Package: SOT-363
  • Marking: 49K

Technical Specifications

ParameterSymbolP-MOSFET ConditionMinTypeMaxUnitN-MOSFET ConditionMinTypeMaxUnit
Drain-Source Breakdown VoltageV(BR)DSSVGS = 0V, ID =-250A-20VVGS = 0V, ID =250A20V
Zero Gate Voltage Drain CurrentIDSSVDS =-20V,VGS = 0V-1AVDS =20V,VGS = 0V1A
Gate-Body Leakage CurrentIGSSVGS =10V, VDS = 0V20AVGS =10V, VDS = 0V20A
Gate Threshold VoltageVGS(th)VDS =VGS, ID =-250A-0.35-0.60-1.1VVDS =VGS, ID =250A0.350.751.1V
Drain-Source On-ResistanceRDS(on)VGS =-4.5V, ID =-1A450520mVGS =4.5V, ID =650mA190380m
VGS =-2.5V, ID =-0.8A650780mVGS =2.5V, ID =550mA260450m
VGS =-1.8V, ID =-0.5A950mVGS =1.8V, ID =450mA390800m
Forward TransconductancegFSVDS =-10V, ID =-0.54A1.2SVDS =10V, ID =800mA1.6S
Diode Forward VoltageVDSIS=-0.5A, VGS = 0V-1.2VIS=0.15A, VGS = 0V1.2V
Input CapacitanceCissVDS =-16V,VGS =0V,f =1MHz113pFVDS=16V,VGS=0V,f=1MHz79120p F
Output CapacitanceCoss15pF1320p F
Reverse Transfer CapacitanceCrss9pF915p F
Turn-on Delay Timetd(on)VDS=-10V,ID=-200mA, VGS=-4.5V,RG=109nsVDS=10V,ID=500mA, VGS=4.5V,RG=106.7ns
Turn-on Rise Timetr5.7ns4.8ns
Turn-off Delay Timetd(off)32.6ns17.3ns
Turn-off Fall Timetf20.3ns7.4ns

2512031620_GOODWORK-3439KDW-GK_C53086348.pdf

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