Silicon Planar Zener Diodes including GOODWORK MM1Z3V3 for Voltage Regulation and Reference Applications
Key Attributes
Model Number:
MM1Z3V3
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Impedance(Zzt):
130Ω
Diode Configuration:
Independent
Zener Voltage(Range):
3.1V~3.5V
Pd - Power Dissipation:
500mW
Zener Voltage(Nom):
3.3V
Mfr. Part #:
MM1Z3V3
Package:
SOD-123
Product Description
MM1Z2V0~MM1Z75 Silicon Planar Zener Diodes
These Silicon Planar Zener Diodes are designed for surface-mounted applications and offer a total power dissipation of up to 500 mW with a tolerance of approximately 5%. They are suitable for various voltage regulation and reference applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon Planar
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Type | Marking Code | Zener Voltage Range (V) | Test Current (mA) | Dynamic Impedance () at Iz (Max.) | Reverse Leakage Current (A) at VR (Max.) | Forward Voltage (V) at IF = 10 mA |
| MM1Z2V0 | 4A | 2.0 (1.8...2.15) | 5 | 100 | 120 | 0.9 |
| MM1Z2V2 | 4B | 2.2 (2.08...2.33) | 5 | 100 | 120 | 0.9 |
| MM1Z2V4 | 4C | 2.4 (2.28...2.56) | 5 | 100 | 120 | 0.9 |
| MM1Z2V7 | 4D | 2.7 (2.5...2.9) | 5 | 110 | 120 | 0.9 |
| MM1Z3V0 | 4E | 3.0 (2.8...3.2) | 5 | 120 | 50 | 0.9 |
| MM1Z3V3 | 4F | 3.3 (3.1...3.5) | 5 | 130 | 20 | 0.9 |
| MM1Z3V6 | 4H | 3.6 (3.4...3.8) | 5 | 130 | 10 | 0.9 |
| MM1Z3V9 | 4J | 3.9 (3.7...4.1) | 5 | 130 | 5 | 0.9 |
| MM1Z4V3 | 4K | 4.3 (4...4.6) | 5 | 130 | 5 | 0.9 |
| MM1Z4V7 | 4M | 4.7 (4.4...5) | 5 | 130 | 2 | 0.9 |
| MM1Z5V1 | 4N | 5.1 (4.8...5.4) | 5 | 130 | 2 | 0.9 |
| MM1Z5V6 | 4P | 5.6 (5.2...6) | 5 | 80 | 1 | 0.9 |
| MM1Z6V2 | 4R | 6.2 (5.8...6.6) | 5 | 50 | 1 | 0.9 |
| MM1Z6V8 | 4X | 6.8 (6.4...7.2) | 5 | 30 | 0.5 | 0.9 |
| MM1Z7V5 | 4Y | 7.5 (7...7.9) | 5 | 30 | 0.5 | 0.9 |
| MM1Z8V2 | 4Z | 8.2 (7.7...8.7) | 5 | 30 | 0.5 | 0.9 |
| MM1Z9V1 | 5A | 9.1 (8.5...9.6) | 5 | 30 | 0.5 | 0.9 |
| MM1Z10 | 5B | 10 (9.4...10.6) | 5 | 30 | 0.1 | 0.9 |
| MM1Z11 | 5C | 11 (10.4...11.6) | 5 | 30 | 0.1 | 0.9 |
| MM1Z12 | 5D | 12 (11.4...12.7) | 5 | 35 | 0.1 | 0.9 |
| MM1Z13 | 5E | 13 (12.4...14.1) | 5 | 35 | 0.1 | 0.9 |
| MM1Z15 | 5F | 15 (13.8...15.6) | 5 | 40 | 0.1 | 0.9 |
| MM1Z16 | 5H | 16 (15.3...17.1) | 5 | 40 | 0.1 | 0.9 |
| MM1Z18 | 5J | 18 (16.8...19.1) | 5 | 45 | 0.1 | 0.9 |
| MM1Z20 | 5K | 20 (18.8...21.2) | 5 | 50 | 0.1 | 0.9 |
| MM1Z22 | 5M | 22 (20.8...23.3) | 5 | 55 | 0.1 | 0.9 |
| MM1Z24 | 5N | 24 (22.8...25.6) | 5 | 60 | 0.1 | 0.9 |
| MM1Z27 | 5P | 27 (25.1...28.9) | 5 | 70 | 0.1 | 0.9 |
| MM1Z30 | 5R | 30 (28...32) | 5 | 80 | 0.1 | 0.9 |
| MM1Z33 | 5X | 33 (31...35) | 5 | 80 | 0.1 | 0.9 |
| MM1Z36 | 5Y | 36 (34...38) | 5 | 90 | 0.1 | 0.9 |
| MM1Z39 | 5Z | 39 (37...41) | 2.5 | 100 | 2 | 0.9 |
| MM1Z43 | 6A | 43 (40...46) | 2.5 | 130 | 2 | 0.9 |
| MM1Z47 | 6B | 47 (44...50) | 2.5 | 150 | 2 | 0.9 |
| MM1Z51 | 6C | 51 (48...54) | 2.5 | 180 | 1 | 0.9 |
| MM1Z56 | 6D | 56 (52...60) | 2.5 | 180 | 1 | 0.9 |
| MM1Z62 | 6E | 62 (58...66) | 2.5 | 200 | 0.2 | 0.9 |
| MM1Z68 | 6F | 68 (64...72) | 2.5 | 250 | 0.2 | 0.9 |
| MM1Z75 | 6H | 75 (70...79) | 2.5 | 300 | 0.2 | 0.9 |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Power Dissipation | Ptot | 500 | mW |
| Junction Temperature | TJ | 150 | C |
| Storage Temperature Range | TStg | -55 to +150 | C |
Characteristics at Ta = 25 C
| Parameter | Symbol | Value | Unit |
| Thermal Resistance Junction to Ambient Air | RthA | 340 | C/W |
| Forward Voltage at IF = 10 mA | VF | 0.9 | V |
2412301735_GOODWORK-MM1Z3V3_C42429383.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
