Load Switching and PWM MOSFET GOODWORK SI2302S N channel Enhancement Mode with Lead Free Construction
Key Attributes
Model Number:
SI2302S
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@4.5V;65mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
28pF
Number:
1 N-channel
Output Capacitance(Coss):
35pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
200pF
Gate Charge(Qg):
3nC@4.5V
Mfr. Part #:
SI2302S
Package:
SOT-23
Product Description
Product Overview
The SI2302S is an N-channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It offers excellent RDS(ON) and low gate charge, making it suitable for load switching, PWM applications, and power management. This lead-free component is designed for high efficiency and reliable performance.
Product Attributes
- Brand: SI (implied from product name)
- Material: Silicon (implied from MOSFET technology)
- Certifications: Lead Free
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | VDS | 20 | V | |||
| Gate-to-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA = 25°C | 2.3 | A | ||
| ID | TA = 100°C | 1.3 | A | |||
| Pulsed Drain Current | IDM | 12 | A | |||
| Power Dissipation | PD | TA = 25°C | 1.2 | W | ||
| Thermal Resistance, Junction to Ambient | RθJA | (2) | 103 | °C/W | ||
| Junction & Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | ID = 250mA, VGS = 0V | 20 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 20V, VGS = 0V | - | - | 1.0 | mA |
| Gate-Body Leakage Current | IGSS | VDS = 0V, VGS = ±12V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250mA | 0.5 | 1.0 | - | V |
| Static Drain-Source ON-Resistance | RDS(ON) | VGS = 4.5V, ID = 3A | - | 45 | 60 | mΩ |
| RDS(ON) | VGS = 2.5V, ID = 2A | - | 65 | 90 | mΩ | |
| Input Capacitance | Ciss | VGS = 0V, VDS = 10V, f = 1MHz | - | 200 | - | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 10V, f = 1MHz | - | 35 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 10V, f = 1MHz | - | 28 | - | pF |
| Total Gate Charge | Qg | VGS = 0 to 4.5V, VDD = 10V, ID = 2A | - | 3 | - | nC |
| Gate Source Charge | Qgs | VGS = 0 to 4.5V, VDD = 10V, ID = 2A | - | 0.5 | - | nC |
| Gate Drain("Miller") Charge | Qgd | VGS = 0 to 4.5V, VDD = 10V, ID = 2A | - | 0.7 | - | nC |
| Turn-On Delay Time | td(on) | VDD = 10V, ID = 2A, RGEN = 3Ω | - | 3 | - | ns |
| Turn-On Rise Time | tr | VDD = 10V, ID = 2A, RGEN = 3Ω | - | 11 | - | ns |
| Turn-Off Delay Time | td(off) | VDD = 10V, ID = 2A, RGEN = 3Ω | - | 20 | - | ns |
| Turn-Off Fall Time | tf | VDD = 10V, ID = 2A, RGEN = 3Ω | - | 8 | - | ns |
| Maximum Continuous Drain to Source Diode Forward Current | IS | - | - | 3 | A | |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | - | - | 12 | A | |
| Drain to Source Diode Forward Voltage | VSD | VGS = 0V, IS = 3A | - | - | 1.2 | V |
| Body Diode Reverse Recovery Time | trr | IF = 2A, di/dt = 100A/us | - | 4.3 | - | ns |
| Body Diode Reverse Recovery Charge | Qrr | IF = 2A, di/dt = 100A/us | - | 0.6 | - | nC |
2504101957_GOODWORK-SI2302S_C22463594.pdf
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