Voltage Controlled MOSFET Goodwork 2N7002DW Designed for Portable Device Load Switching Applications
Key Attributes
Model Number:
2N7002DW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.1Ω@4.5V,200mA
Gate Threshold Voltage (Vgs(th)):
60V@250uA
Reverse Transfer Capacitance (Crss@Vds):
10pF@10V
Number:
2 N-Channel
Input Capacitance(Ciss):
40pF@10V
Output Capacitance(Coss):
30pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
30nC@25V
Mfr. Part #:
2N7002DW
Package:
SOT-363
Product Description
Product Overview
The 2N7002DW is a voltage-controlled small signal switch featuring a high density cell design for low RDS(on). It is rugged, reliable, and offers high saturation current capability with ESD protection. This MOSFET is ideal for load switching in portable devices and DC/DC converters.
Product Attributes
- Model: 2N7002DW
- Package: SOT-363
- Material: Plastic-Encapsulate MOSFET
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Static Characteristics | VDS | VGS = 0V, ID =250A | 60 | V | ||
| VGS(th) | VDS =VGS, ID =1mA | 1 | 1.3 | 2.5 | V | |
| IDSS | VDS =48V,VGS = 0V | 1 | A | |||
| IGSS1 | VGS =20V, VDS = 0V | 10 | A | |||
| RDS(on) | VGS = 4.5V, ID =200mA | 1.1 | 5.3 | |||
| VGS =10V,ID =500mA | 0.9 | 5 | ||||
| Dynamic Characteristics** | Ciss | VDS =10V,VGS =0V,f =1MHz | 40 | pF | ||
| Coss | 30 | pF | ||||
| Crss | 10 | pF | ||||
| Switching Characteristics** | td(on) | VGS=10V,VDD=50V,RG=50, RGS=50, RL=250 | 10 | ns | ||
| td(off) | 15 | ns | ||||
| trr | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/s | 30 | ns | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=300mA | 1.5 | V | ||
| Recovered charge | Qr | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/s | 30 | nC | ||
| Gate-Source Breakdown Voltage | BVGSO | Igs=1mA (Open Drain) | 21.5 | 30 | V |
2501081735_GOODWORK-2N7002DW_C42434496.pdf
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