Power MOSFET GOODWORK 16N65F Featuring High Voltage Rating and 100 Percent Avalanche Tested for Operation
Key Attributes
Model Number:
16N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
16A
Operating Temperature -:
-55℃~+150℃
RDS(on):
550mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Output Capacitance(Coss):
214pF
Pd - Power Dissipation:
98W
Input Capacitance(Ciss):
2.74nF
Gate Charge(Qg):
71nC@10V
Mfr. Part #:
16N65F
Package:
TO-220F
Product Description
16N65F N-Channel Enhancement Mode MOSFET (FULLY INSULATED)
The 16N65F is a fully insulated N-Channel Enhancement Mode MOSFET designed for high-performance applications. It offers a 650V voltage rating and 16A continuous drain current, with a low typical on-resistance of 0.48. Key features include fast switching speeds, improved dv/dt capability, and 100% avalanche testing, making it suitable for demanding power supply applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | - | - | 650 | V | |
| VGSS | Gate-Source Voltage | - | - | ±30 | V | |
| ID | Continuous Drain Current | TC = 25 | - | - | 16 | A |
| TC = 100 | - | - | 10 | A | ||
| IDM | Pulsed Drain Current note1 | - | - | 64 | A | |
| EAS | Single Pulsed Avalanche Energy note2 | - | 461 | - | mJ | |
| PD | Power Dissipation | TC = 25 | - | - | 98 | W |
| RJC | Thermal Resistance, Junction to Case | - | 1.3 | - | /W | |
| RJA | Thermal Resistance, Junction to Ambient | - | 62.5 | - | /W | |
| TJ, TSTG | Operating and Storage Temperature Range | -55 | - | +150 | ||
| Electrical Characteristics | ||||||
| Off Characteristic | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250µA | 650 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=650V, VGS=0V, TJ=25 | - | - | 1 | µA |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS= ±30V | - | - | ±100 | nA |
| On Characteristic | ||||||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250µA | 2 | 3 | 4 | V |
| RDS(on) | Static Drain-Source on-Resistance note3 | VGS =10V, ID =8A | - | 0.48 | 0.55 | Ω |
| Dynamic Characteristic | ||||||
| Ciss | Input Capacitance | VDS=25V, VGS=0V, f=1.0MHz | - | 2740 | - | pF |
| Coss | Output Capacitance | - | 214 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 15 | - | pF | |
| Gate Charge | ||||||
| Qg | Total Gate Charge | VDD=520V, ID=16A, VGS=10V | - | 71 | - | nC |
| Qgs | Gate-Source Charge | - | 10 | - | nC | |
| Qgd | Gate-Drain(Miller) Charge | - | 32 | - | nC | |
| Switching Characteristic | ||||||
| td(on) | Turn-on Delay Time | VDD=325V, ID=16A, RG=25Ω | - | 35 | - | ns |
| tr | Turn-on Rise Time | - | 50 | - | ns | |
| td(off) | Turn-off Delay Time | - | 160 | - | ns | |
| tf | Turn-off Fall Time | - | 65 | - | ns | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | 16 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | 64 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, ISD=16A | - | - | 1.4 | V |
| trr | Reverse Recovery Time | VGS=0V, IS=16A, di/dt=100A/µs | - | 430 | - | ns |
| Qrr | Reverse Recovery Charge | - | 6.5 | - | µC | |
Applications
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply (UPS)
- Power Factor Correction (PFC)
2408021728_GOODWORK-16N65F_C17702913.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
