High cell density N channel MOSFET GOODWORK 50N03DF offering low RDSON and gate charge for synchronous buck converters
Key Attributes
Model Number:
50N03DF
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
RDS(on):
8.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
131pF
Number:
1 N-channel
Output Capacitance(Coss):
163pF
Input Capacitance(Ciss):
1.2nF
Pd - Power Dissipation:
18W
Gate Charge(Qg):
12.8nC@4.5V
Mfr. Part #:
50N03DF
Package:
PDFN3x3-8
Product Description
Product Overview
The 50N03DF is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDSON and gate charge, with advantages including a green device option, low gate charge, and reduced Cdv/dt effect due to advanced trench technology. It meets RoHS and Green Product standards.
Product Attributes
- Certifications: RoHS, Green Product
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | --- | --- | V |
| BVDSS Temperature Coefficient | BVDSS/TJ | Reference to 25, ID=1mA | --- | 0.027 | --- | V/ |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=12A | --- | 7 | 8.5 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=10A | --- | 10 | 14 | V |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | --- | 2.5 | V |
| VGS(th) Temperature Coefficient | VGS(th) | --- | -5.8 | --- | mV/ | |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=55 | --- | --- | 5 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| Gate Resistance | Rg | VDS=0V , VGS=0V , f=1MHz | --- | 1.7 | --- | |
| Total Gate Charge | Qg | VDS=20V , VGS=4.5V , ID=12A | --- | 12.8 | --- | nC |
| Gate-Source Charge | Qgs | --- | --- | 3.3 | --- | --- |
| Gate-Drain Charge | Qgd | --- | --- | 6.5 | --- | --- |
| Turn-On Delay Time | Td(on) | VDD=12V , VGS=10V , RG=3.3 ID=5A | --- | 4.5 | --- | ns |
| Rise Time | Tr | --- | --- | 10.8 | --- | --- |
| Turn-Off Delay Time | Td(off) | --- | --- | 25.5 | --- | --- |
| Fall Time | Tf | --- | --- | 9.6 | --- | --- |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | --- | 1200 | --- | pF |
| Output Capacitance | Coss | --- | --- | 163 | --- | --- |
| Reverse Transfer Capacitance | Crss | --- | --- | 131 | --- | --- |
| Continuous Drain Current | ID | VGS @ 10V, TC=25 | --- | --- | 50 | A |
| Continuous Drain Current | ID | VGS @ 10V, TC=100 | --- | --- | 30 | A |
| Pulsed Drain Current | IDM | --- | --- | --- | 120 | A |
| Single Pulse Avalanche Energy | EAS | --- | --- | --- | 39 | mJ |
| Avalanche Current | IAS | --- | --- | --- | 50 | A |
| Total Power Dissipation | PD | TC=25 | --- | --- | 18 | W |
| Storage Temperature Range | TSTG | --- | -55 | --- | 150 | |
| Operating Junction Temperature Range | TJ | --- | -55 | --- | 150 | |
| Thermal Resistance Junction-ambient | RJA | --- | --- | --- | 75 | /W |
| Thermal Resistance Junction-Case | RJC | --- | --- | 4.32 | --- | /W |
| Continuous Source Current | IS | VG=VD=0V , Force Current | --- | --- | 50 | A |
| Pulsed Source Current | ISM | --- | --- | --- | 120 | A |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V |
2410122016_GOODWORK-50N03DF_C21713991.pdf
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