Small signal switching transistor GOODWORK SI2306 featuring low RDS ON and stable performance design
Product Overview
The SI2306 is an N-Channel Enhancement Mode Field Effect Transistor designed for voltage-controlled small signal switching. It features a high-density cell design for low RDS(ON), a rugged and reliable construction, and high saturation current capability. This transistor is suitable for applications requiring efficient and stable switching performance.
Product Attributes
- Marking Type number: SI2306
- Marking code: A6SHB
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DS | VGS = 0V, ID =250A | 30 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 3.0 | V | |
| Gate-Body Leakage | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =30V, VGS =0V | 0.5 | A | ||
| Drain-Source On-Resistance | RDS(on) | VGS =10V, ID =3.5A | 0.038 | 0.047 | ||
| VGS =4.5V, ID =2.8A | 0.052 | 0.065 | ||||
| Forward Transconductance | gfs | VDS =4.5V, ID =2.5A | 7.0 | S | ||
| Diode Forward Voltage | VSD | IS=1.25A,VGS=0V | 0.8 | 1.2 | V | |
| Gate Charge | Qg | VDS =15V,VGS =5V,ID =2.5A | 3.0 | 4.5 | nC | |
| VDS =15V,VGS =10V,ID =2.5A | 6 | 9 | ||||
| Gate-Source Charge | Qgs | 1.6 | nC | |||
| Gate-Drain Charge | Qg | 0.6 | nC | |||
| Gate Resistance | Rg | f =1.0MHz | 2.5 | 7.5 | ||
| Input Capacitance | Ciss | VDS =15V,VGS =0V,f =1MHz | 305 | pF | ||
| Output Capacitance | Coss | 65 | pF | |||
| Reverse Transfer Capacitance | Crss | 29 | pF | |||
| Turn-On Delay Time | td(on) | VDD=15V, RL=15, ID 1A, VGEN=10V,Rg=6 | 7 | 11 | ns | |
| Rise Time | tr | 12 | 18 | ns | ||
| Turn-Off Delay Time | td(off) | 14 | 25 | ns | ||
| Fall Time | tf | 6 | 10 | ns |
2410121917_GOODWORK-SI2306_C5248047.pdf
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