N Channel Super Junction MOSFET GOODWORK 380R65F with 650V Drain Source Voltage and ultra low gate charge

Key Attributes
Model Number: 380R65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
380mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
29pF
Number:
1 N-channel
Output Capacitance(Coss):
518pF
Input Capacitance(Ciss):
945pF
Pd - Power Dissipation:
32W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
380R65F
Package:
TO-220F
Product Description

Product Overview

The 380R65F is an N-Channel Super Junction MOSFET designed for high voltage applications. It offers a Drain-Source voltage of 650V, a low on-resistance of 0.38 (Max.), and ultra-low gate charge of 20nC (Typ.). This RoHS compliant device is 100% avalanche tested, making it suitable for demanding power electronics designs.

Product Attributes

  • Channel Type: N-Channel
  • Technology: Super Junction MOSFET
  • Compliance: RoHS compliant
  • Testing: 100% avalanche tested

Technical Specifications

CharacteristicSymbolRating/ConditionUnitMin.Typ.Max.
Absolute Maximum RatingsVDSS650V
VGSS±30V
ID (Tc=25°C)11A
ID (Tc=100°C)7A
IDM44A
EAS135mJ
IAR5A
EAR63.2mJ
PD32W
TJ150°C
Thermal CharacteristicsRth(j-c)3.9°C/WMax.
Rth(j-a)62.5°C/WMax.
Electrical CharacteristicsBVDSSID=250uA, VGS=0650V650--
VGS(th)ID=250uA, VDS=VGSV234
IDSSVDS=650V, VGS=0VuA--1
IDSSVDS=650V, TJ=125°CuA--100
IGSSVDS=0V, VGS=±30VnA--±100
RDS(ON)VGS=10V, ID=5.5AΩ-0.310.38
Rgf=1MHz, Open drainΩ-2128
CissVDS=25V, VGS=0V, f=1MHzpF629787945
CosspF344431518
CrsspF192429
QgVDS=400V, VGS=10V, ID=7AnC-2025
Source-Drain DiodeISA--11
ISMA--44
VSDVGS=0V, IS=11AV--1.2
trrIS=11A, VGS=0V, dIS/dt=100A/usns-326450
trrIS=11A, VGS=0V, dIS/dt=100A/usuC-2.84.5

2410121614_GOODWORK-380R65F_C17702908.pdf

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