Synchronous buck converter P channel MOSFET GOODWORK SI2305 offering power management with trench technology
Key Attributes
Model Number:
SI2305
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
33mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 P-Channel
Output Capacitance(Coss):
132pF
Input Capacitance(Ciss):
830pF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
8.8nC@4.5V
Mfr. Part #:
SI2305
Package:
SOT-23
Product Description
Product Overview
The SI2305 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and gate charge, meeting RoHS and Green Product requirements with full reliability. This device utilizes advanced high cell density Trench technology for superior performance and efficiency.
Product Attributes
- Brand: DEMACHEL
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -4.5V | -4.1 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -4.5V | -3.0 | A | |||
| IDM | Pulsed Drain Current | -16 | A | |||
| PD@TA=25 | Total Power Dissipation | 1.31 | W | |||
| PD@TA=70 | Total Power Dissipation | 0.84 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Electrical Characteristics (TJ=25 unless otherwise specified) | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID= -250µA | -20 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS= -20V, VGS=0V | -1 | µA | ||
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS= ±12V | ±100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID= -250µA | -0.4 | -0.7 | -1.0 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS= -4.5V, ID= -4.1A | 33 | 45 | mΩ | |
| RDS(on) | Static Drain-Source on-Resistance | VGS= -2.5V, ID= -3A | 42 | mΩ | ||
| Ciss | Input Capacitance | VDS= -10V, VGS=0V, f=1.0MHz | 830 | pF | ||
| Coss | Output Capacitance | 132 | pF | |||
| Crss | Reverse Transfer Capacitance | 85 | pF | |||
| Qg | Total Gate Charge | VDS= -10V, ID= -2A, VGS= -4.5V | 8.8 | nC | ||
| Qgs | Gate-Source Charge | 1.4 | nC | |||
| Qgd | Gate-Drain(Miller) Charge | 1.9 | nC | |||
| td(on) | Turn-on Delay Time | VDD= -10V, ID= -3.3A, RG= 1Ω, VGEN= -4.5V | 10 | ns | ||
| tr | Turn-on Rise Time | 32 | ns | |||
| td(off) | Turn-off Delay Time | 50 | ns | |||
| tf | Turn-off Fall Time | 51 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | -5.0 | A | |||
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | -16 | A | |||
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS= -4.1A | -1.2 | V | ||
2505211137_GOODWORK-SI2305_C5248046.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
