Avalanche tested N Channel MOSFET GOODWORK 7N65F with low gate charge and fast switching capability
Key Attributes
Model Number:
7N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.3Ω@10V,3.5A
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
40pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
180pF
Input Capacitance(Ciss):
1.21nF@25V
Pd - Power Dissipation:
48W
Gate Charge(Qg):
29nC@10V
Mfr. Part #:
7N65F
Package:
ITO-220AB-3
Product Description
Product Overview
The 7N65F is a N-Channel MOSFET designed for high-voltage applications. It features low gate charge, low Ciss, fast switching, and improved dv/dt capability, making it suitable for various power switching applications. The device is 100% avalanche tested.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | ITO-220AB Rating | TO-252 Rating | Unit | Test Conditions |
| Drain-Source Voltage | VDSS | 650 | 650 | V | |
| Gate-Source Voltage | VGSS | ±30 | ±30 | V | |
| Continuous Drain Current | ID | 7 | 7 | A | |
| Pulsed Drain Current (Note 2) | IDM | 28 | 28 | A | Pulse width limited by TJ |
| Avalanche Energy Single Pulsed (Note 3) | EAS | 435 | 435 | mJ | L = 30mH, IAS = 5.25A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C |
| Power Dissipation | PD | 48 | 48 | W | |
| Junction Temperature | TJ | +150 | +150 | °C | |
| Storage Temperature | TSTG | -55 ~ +150 | -55 ~ +150 | °C | |
| Drain-Source Breakdown Voltage | BVDSS | 650 | 650 | V | VGS =0V, ID=250μA |
| Drain-Source Leakage Current | IDSS | 1 | 1 | μA | VDS=650V, VGS=0V |
| Gate-Source Leakage Current Forward | IGSS | 100 | 100 | nA | VG=30V, VDS=0V |
| Gate-Source Leakage Current Reverse | IGSS | -100 | -100 | nA | VGS=-30V, VDS=0V |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 0.67 | 0.67 | V/°C | ID=250μA, Referenced to 25°C |
| Gate Threshold Voltage | VGS(TH) | 2.0 - 4.0 | 2.0 - 4.0 | V | VDS =VGS, ID=250μA |
| Static Drain-Source On-State Resistance | RDS(ON) | 1.3 - 1.5 | 1.3 - 1.5 | Ω | VGS= 10V, ID = 3.5A |
| Input Capacitance | CISS | 1210 - 1400 | 1210 - 1400 | pF | VDS=25V, VGS =0V, f=1.0 MHz |
| Output Capacitance | COSS | 140 - 180 | 140 - 180 | pF | VDS=520V, ID=7A, VGS=10V (Note 1, 2) |
| Reverse Transfer Capacitance | CRSS | 40 - 50 | 40 - 50 | pF | VGS=0V, IS = 7A |
| Turn-On Delay Time | tD(ON) | 50 - 70 | 50 - 70 | ns | VDD =300V, ID =7A, RG =25Ω (Note 1, 2) |
| Turn-On Rise Time | tR | 150 - 180 | 150 - 180 | ns | |
| Turn-Off Delay Time | tD(OFF) | 380 - 410 | 380 - 410 | ns | |
| Turn-Off Fall Time | tF | 180 - 220 | 180 - 220 | ns | |
| Total Gate Charge | QG | 29 - 38 | 29 - 38 | nC | |
| Gate-Source Charge | QGS | 9 | 9 | nC | |
| Gate-Drain Charge | QGD | 19 | 19 | nC | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | 1.4 | V | VGS=0V, IS = 7A |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 7 | 7 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 28 | 28 | A | |
| Reverse Recovery Time | trr | 490 | 490 | ns | VGS=0V, IS=7.0A, dIF/dt =100 A/μs (Note 1) |
| Reverse Recovery Charge | QRR | 3.2 | 3.2 | μC |
2410121844_GOODWORK-7N65F_C2962213.pdf
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