Low Ciss and fast switching N Channel MOSFET GOODWORK 5N65 designed for demanding power applications
Key Attributes
Model Number:
5N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.2Ω@10V,2.5A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
2.9pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
36W
Input Capacitance(Ciss):
623pF@25V
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
5N65
Package:
TO-252
Product Description
Product Overview
The 5N65 is an N-Channel Enhancement Mode MOSFET designed for high-performance applications. It offers a 650V breakdown voltage and a continuous drain current of 5A, with a pulsed current capability of 10A. Key advantages include low gate charge, low Ciss, fast switching speeds, and improved dv/dt capability. This MOSFET is 100% avalanche tested, making it suitable for demanding power electronics designs.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDSS | 650 | V | |||
| Gate-Source Voltage | VGSS | ±30 | V | |||
| Drain Current Continuous | ID | 5 | A | |||
| Drain Current Pulsed (Note 2) | IDM | 10 | A | |||
| Avalanche Energy Single Pulsed (Note 3) | EAS | L = 10mH, IAS = 4.73A, VDD = 50V, RG = 25 Starting TJ = 25°C | 112 | mJ | ||
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | ISD ≤ 7.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C | 3.2 | V/ns | ||
| Power Dissipation | PD | 36 | W | |||
| Junction Temperature | TJ | +150 | °C | |||
| Storage Temperature | TSTG | -55 | ~ | +150 | °C | |
| OFF CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID= 250μA | 650 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=650V, VGS=0V | 10 | μA | ||
| Gate-Source Leakage Current Forward | IGSS | VGS=30V, VDS=0V | 100 | nA | ||
| Gate-Source Leakage Current Reverse | IGSS | VGS=-30V, VDS=0V | -100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250μA | 2.0 | 4.0 | V | |
| Static Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=2.5A | 1.8 | 2.2 | Ω | |
| DYNAMIC CHARACTERISTICS | ||||||
| Input Capacitance | CISS | VGS=0V, VDS=25V, f=1.0 MHz | 623 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS=25V, f=1.0 MHz | 62 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS=25V, f=1.0 MHz | 2.9 | pF | ||
| SWITCHING CHARACTERISTICS | ||||||
| Total Gate Charge (Note 1) | QG | VDS=100V, VGS=10V, ID=2.0A | 15 | nC | ||
| Gate-Source Charge | QGS | VDS=100V, VGS=10V, ID=2.0A | 5.6 | nC | ||
| Gate-Drain Charge | QGD | VDS=100V, VGS=10V, ID=2.0A | 2.5 | nC | ||
| Turn-on Delay Time (Note 1) | tD(ON) | VDS=30V, VGS=10V, ID=0.5A, RG=25Ω | 4.4 | ns | ||
| Rise Time | tR | VDS=30V, VGS=10V, ID=0.5A, RG=25Ω | 24 | ns | ||
| Turn-off Delay Time | tD(OFF) | VDS=30V, VGS=10V, ID=0.5A, RG=25Ω | 122 | ns | ||
| Fall-Time | tF | VDS=30V, VGS=10V, ID=0.5A, RG=25Ω | 25 | ns | ||
| SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Maximum Body-Diode Continuous Current | IS | 5 | A | |||
| Maximum Body-Diode Pulsed Current | ISM | 10 | A | |||
| Drain-Source Diode Forward Voltage (Note 1) | VSD | VGS=0V, IS=5.0A | 1.4 | V | ||
| Reverse Recovery Time (Note 1) | trr | VGS=0V, IS=5.0A, dIF/dt=100A/μs | 328 | ns | ||
| Reverse Recovery Charge | Qrr | VGS=0V, IS=5.0A, dIF/dt=100A/μs | 2.65 | μC | ||
2410121816_GOODWORK-5N65_C5807885.pdf
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