N channel power MOSFET Guangdong Hottech IRLML6344 with 30V drain source voltage and low on resistance
Key Attributes
Model Number:
IRLML6344
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
RDS(on):
29mΩ@4.5V,5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.1V
Reverse Transfer Capacitance (Crss@Vds):
46pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
650pF@25V
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
6.8nC@4.5V
Mfr. Part #:
IRLML6344
Package:
SOT-23
Product Description
Product Overview
The IRLML6344 is an N-CHANNEL POWER MOSFET designed for various electronic applications. It offers a maximum drain-source voltage of 30V and a maximum gate-source voltage of 12V, with low on-resistance characteristics.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Case Material: Molded plastic
- Flammability Classification: UL 94V-0
- Terminal Finish: Lead free plating, solderable per MIL-STD-202, method 208
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| FEATURES | ||||
| VDS max | VDS | 30 | V | |
| VGS max | VGS | 12 | V | |
| RDS(on) max @VGS=4.5V | RDS(on) | 29 | m | VGS=4.5V |
| RDS(on) max @VGS=2.5V | RDS(on) | 37 | m | VGS=2.5V |
| MECHANICAL DATA | ||||
| Case | SOT-23 | |||
| Weight | 0.008 | grams (approximate) | ||
| MAXIMUM RATINGS | ||||
| Drain-source voltage | VDS | 30 | V | TA= 25C |
| Continuous drain current @VGS=10V | ID | 5.0 | A | TA= 25C |
| Continuous drain current @VGS=10V,TA=70C | ID | 4.0 | A | TA=70C |
| Pulsed drain current | IDM | 25 | A | |
| Maximum power dissipation | PD | 1.3 | W | TA= 25C |
| Maximum power dissipation @TA=70C | PD | 0.8 | W | TA=70C |
| Gate-to-source voltage | VGS | 12 | V | |
| Junction and storage temperature range | TJ,TSTG | -55 ~+ 150 | C | |
| Thermal resistance from junction-to-ambient (note 1) | RJA | 100 | C/W | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-to-source breakdown voltage | V(BR)DSS | 30 | V | VGS=0V,ID=250A |
| Breakdown voltage temp. coefficient | V(BR)DSS/ TJ | 0.02 | V/C | Reference to 25C,ID=1mA |
| Static drain-to-source on- resistance | RDS(on) | 22 | m | VGS= 4.5V, ID = 5.0A |
| Static drain-to-source on- resistance | RDS(on) | 27 | m | VGS = 2.5V, ID = 4.0A |
| Gate threshold voltage | VGS(th) | 0.5 ~ 1.1 | V | VDS = VGS, ID = 10A |
| Drain-to-source leakage current | IDSS | 1.0 | A | VDS =24V, VGS = 0V |
| Gate-to-source forward leakage | IGSS | 100 | nA | VGS= 12V |
| Gate-to-source reverse leakage | IGSS | -100 | nA | VGS=-12V |
| Internal gate resistance | RG | 1.7 | ||
| Forward transconductance | gfs | 19 | S | VDS= 10V, ID= 5.0A |
| Total gate charge | Qg | 6.8 | nC | ID=5.0A,VDS=15V,VGS=4.5V (note 2) |
| Gate-to-source charge | Qgs | 0.3 | nC | |
| Gate-to-drain ("Miller") charge | Qgd | 2.4 | nC | |
| Turn-on delay time | td(on) | 4.2 | ns | VDD=15V,ID=1.0A,RG=6.8,VGS=4.5V (note 2) |
| Rise time | tr | 5.6 | ns | |
| Turn-off delay time | td(off) | 22 | ns | |
| Fall time | tf | 9.1 | ns | |
| Input capacitance | Ciss | 650 | pF | VGS=0V,VDS=25V =1.0MHz |
| Output capacitance | Coss | 65 | pF | |
| Reverse transfer capacitance | Crss | 46 | pF | |
| Continuous source current (body diode) | IS | 1.3 | A | |
| Pulsed source current (body diode,note 1) | ISM | 25 | A | |
| Diode forward voltage (note 2) | VSD | 1.2 | V | TJ=25C,IS=5.0A,VGS=0V |
| Reverse recovery time (note 2) | trr | 10 ~ 15 | ns | TJ=25C,VR=15V,IF=1.3A, di/dt =100A/s |
| Reverse recovery charge (note 2) | Qrr | 3.8 ~ 5.7 | nC | |
2410122008_Guangdong-Hottech-IRLML6344_C5364313.pdf
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