Durable power switching device Guangdong Hottech SI2305 P Channel MOSFET with molded plastic housing
Key Attributes
Model Number:
SI2305
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@4.5V,3.5A
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Input Capacitance(Ciss):
740pF
Output Capacitance(Coss):
290pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
15nC@4.5V
Mfr. Part #:
SI2305
Package:
SOT-23
Product Description
Product Overview
The SI2305 is a P-Channel MOSFET featuring a high-density cell design for extremely low RDS(ON). It is rugged and reliable, housed in a molded plastic case. This device is suitable for various applications requiring efficient power switching.
Product Attributes
- Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD
- Origin: Not specified
- Material: Molded Plastic
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |
| Absolute Maximum Ratings | VDS | -12 | V | ||||
| VGS | 8 | V | |||||
| ID | -4.1 | A | |||||
| IDM | -10 | A | |||||
| PD | @TA=25 C | 0.35 | W | ||||
| Tj, Tstg | -55 | +150 | C | ||||
| Electrical Characteristics | V(BR)DSS | VGS = 0V, ID =-250A | -12 | V | |||
| VGS(th) | VDS =VGS, ID =-250A | -0.5 | -0.9 | V | |||
| IGSS | VDS =0V, VGS =8V | 100 | nA | ||||
| IDSS | VDS =-8V, VGS =0V | -1 | A | ||||
| RDS(on) | VGS =-4.5V, ID =-3.5A | 30 | 45 | m | |||
| RDS(on) | VGS =-2.5V, ID =-3A | 40 | 60 | m | |||
| RDS(on) | VGS =-1.8V,ID=-2.0A | 60 | 90 | m | |||
| gfs | VDS =-5V, ID =-4.1A | 6 | S | ||||
| Ciss | VDS =-4V,VGS =0V,f =1MHz | 740 | pF | ||||
| Coss | 290 | pF | |||||
| Crss | 190 | pF | |||||
| Dynamic Characteristics | Qg | VDS =-4V,VGS =-4.5V, ID =-4.1A | 7.8 | 15 | nC | ||
| Qgs | 4.5 | 9 | nC | ||||
| Qgd | VDS =-4V,VGS =-2.5V, ID =-4.1A | 1.2 | 1.6 | nC | |||
| Rg | f =1MHz | 1.4 | 7 | ||||
| td(on) | VDD=-4V, RL=1.2, ID -3.3A, VGEN=-4.5V,Rg=1 | 13 | 20 | ns | |||
| tr | 35 | 53 | ns | ||||
| Body Diode Characteristics | IS | TC=25 | -1.4 | A | |||
| ISM | -10 | A | |||||
| VSD | IF=-3.3A | -1.2 | V | ||||
| td(off) | VDD=-4V, RL=1.2, ID -3.3A, VGEN=-4.5V,Rg=1 | 32 | 48 | ns | |||
| Dynamic Characteristics (cont.) | tf | 10 | 20 | ns | |||
| td(on) | VDD=-4V, RL=1.2, ID -3.3A, VGEN=-8V,Rg=1 | 5 | 10 | ns | |||
| tr | 11 | 17 | ns | ||||
| td(off) | 22 | 33 | ns | ||||
| tf | 16 | 24 | ns |
2410121706_Guangdong-Hottech-SI2305_C181088.pdf
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