Power MOSFET GOODWORK 5P04 P channel Enhancement Mode featuring low gate charge and stable operation
Key Attributes
Model Number:
5P04
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
5A
RDS(on):
66mΩ@10V,3A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
42pF@20V
Pd - Power Dissipation:
3.4W
Input Capacitance(Ciss):
573pF@20V
Output Capacitance(Coss):
53pF
Gate Charge(Qg):
7.1nC@10V
Mfr. Part #:
5P04
Package:
SOT-23
Product Description
Product Overview
The 5P04 is a P-channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It offers excellent RDS(ON) and low gate charge, making it suitable for PWM applications, load switching, and power management. This lead-free product is designed for high performance and efficiency.
Product Attributes
- Brand: DEMACHEL
- Product Code: 5P04
- Technology: P-channel Enhancement Mode Power MOSFET, Advanced Trench Technology
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Off Characteristic | Drain-Source Breakdown Voltage (V(BR)DSS), VGS=0V, ID= -250A | -40 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS), VDS= -40V, VGS=0V | - | - | -1 | A | |
| Gate to Body Leakage Current (IGSS), VDS=0V, VGS= 20V | - | - | 100 | nA | |
| On Characteristic | Gate Threshold Voltage (VGS(th)), VDS=VGS, ID= -250A | -1.0 | -1.6 | -2.5 | V |
| Static Drain-Source on-Resistance (RDS(on)), VGS= -10V, ID= -3A | - | 66 | 85 | m | |
| Dynamic Characteristic | Input Capacitance (Ciss), VDS= -20V, VGS=0V, f=1.0MHz | - | 573 | - | pF |
| Dynamic Characteristic | Output Capacitance (Coss), VDS= -20V, VGS=0V, f=1.0MHz | - | 53 | - | pF |
| Dynamic Characteristic | Reverse Transfer Capacitance (Crss), VDS= -20V, VGS=0V, f=1.0MHz | - | 42 | - | pF |
| Dynamic Characteristic | Total Gate Charge (Qg), VDS= -20V, ID= -3A, VGS= -10V | - | 7.1 | - | nC |
| Switching Characteristic | Turn-on Delay Time (td(on)), VDD= -20V, ID= -5A, VGS= -10V, RGEN=2.5 | - | 6.5 | - | ns |
| Switching Characteristic | Turn-on Rise Time (tr) | - | 14 | - | ns |
| Switching Characteristic | Turn-off Delay Time (td(off)) | - | 34 | - | ns |
| Switching Characteristic | Turn-off Fall Time (tf) | - | 18 | - | ns |
| Drain-Source Diode | Maximum Continuous Drain to Source Diode Forward Current (IS) | - | - | -5 | A |
| Drain to Source Diode Forward Voltage (VSD), VGS=0V, IS= -5A | - | - | -1.2 | V | |
| Absolute Maximum Ratings | Drain-Source Voltage (VDSS) | - | - | -40 | V |
| Absolute Maximum Ratings | Gate-Source Voltage (VGSS) | - | - | 20 | V |
| Absolute Maximum Ratings | Continuous Drain Current (ID), TA= 25 | - | - | -5 | A |
| Absolute Maximum Ratings | Continuous Drain Current (ID), TA= 100 | - | - | -3.3 | A |
| Absolute Maximum Ratings | Pulsed Drain Current (IDM) | - | - | -20 | A |
| Absolute Maximum Ratings | Power Dissipation (PD), TA= 25 | - | - | 3.4 | W |
| Absolute Maximum Ratings | Thermal Resistance, Junction to Ambient (RJA) | - | 37 | - | /W |
| Absolute Maximum Ratings | Operating and Storage Temperature Range (TJ, TSTG) | -55 | - | +150 |
2506251635_GOODWORK-5P04_C49242198.pdf
Related Products
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
