Small Signal MOSFET GOODWORK FDN337N GK Featuring Rugged Design and High Saturation Current Capability
Key Attributes
Model Number:
FDN337N-GK
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
23mΩ@10V,5.8A
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
1.05nF@15V
Mfr. Part #:
FDN337N-GK
Package:
SOT-23
Product Description
Product Overview
The FDN337N is a N-Channel Enhancement Mode Field Effect Transistor designed for high-density cell applications. It functions as a voltage-controlled small signal switch with a rugged and reliable design, offering high saturation current capability. Its key advantage is the high-density cell design for low RDS(ON).
Product Attributes
- Marking Type number: FDN337N
- Marking code: 3400
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | 5.8 | A | |||
| Drain Current-Pulsed (note 1) | IDM | 30 | A | |||
| Power Dissipation | PD | 1.5 | W | |||
| Thermal Resistance from Junction to Ambient (note 2) | RθJA | 357 | °C/W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | TSTG | -55 | +150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =24V,VGS = 0V | 1 | µA | ||
| Gate-source leakage current | IGSS | VGS =±12V, VDS = 0V | ±100 | nA | ||
| Drain-source on-resistance (note 3) | RDS(on) | VGS =10V, ID =5.8A | 28 | mΩ | ||
| Drain-source on-resistance (note 3) | RDS(on) | VGS =4.5V, ID =5A | 38 | mΩ | ||
| Drain-source on-resistance (note 3) | RDS(on) | VGS =2.5V,ID=4A | 52 | mΩ | ||
| Forward tranconductance | gFS | VDS =5V, ID =5A | 8 | S | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 0.7 | 1.4 | V | |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V,f =1MHz | 1050 | pF | ||
| Output capacitance | Coss | VDS =15V,VGS =0V,f =1MHz | 99 | pF | ||
| Reverse transfer capacitance | Crss | VDS =15V,VGS =0V,f =1MHz | 77 | pF | ||
| Gate resistance | Rg | VDS =0V,VGS =0V,f =1MHz | 3.6 | Ω | ||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω | 5 | ns | ||
| Turn-on rise time | tr | VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω | 7 | ns | ||
| Turn-off delay time | td(off) | VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω | 40 | ns | ||
| Turn-off fall time | tf | VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω | 6 | ns | ||
| Diode Characteristics | ||||||
| Diode forward voltage (note 3) | VSD | IS=1A,VGS=0V | 1 | V | ||
2504101957_GOODWORK-FDN337N-GK_C46962146.pdf
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