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quality High Cell Density MOSFET GOODWORK 60N03 TO 252 with Low Gate Charge and Static Drain Source Resistance factory
quality High Cell Density MOSFET GOODWORK 60N03 TO 252 with Low Gate Charge and Static Drain Source Resistance factory

High Cell Density MOSFET GOODWORK 60N03 TO 252 with Low Gate Charge and Static Drain Source Resistance

Key Attributes
Model Number: 60N03(TO-252)
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4.3mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
315pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
4nF@15V
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
31.6nC@4.5V
Mfr. Part #:
60N03(TO-252)
Package:
TO-252
Product Description

Product Overview

The 60N03 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approved, featuring super low gate charge and an advanced high cell density trench technology.

Product Attributes

  • Certifications: RoHS, Green Product

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=30A --- --- 6 m
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V , ID=15A --- --- 9 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 --- 2.5 V
IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25 --- --- 1 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA
Qg Total Gate Charge VDS=15V , VGS=4.5V , ID=15A --- --- --- nC
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- --- 4000 pF
Coss Output Capacitance VDS=15V , VGS=0V , f=1MHz --- --- 530 pF
Crss Reverse Transfer Capacitance VDS=15V , VGS=0V , f=1MHz --- --- --- pF
IS Continuous Source Current VG=VD=0V , Force Current --- --- 80 A
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25 --- --- 1 V
trr Reverse Recovery Time IF=30A , dI/dt=100A/s , J=25 --- --- 18 nS
Qrr Reverse Recovery Charge IF=30A , dI/dt=100A/s , J=25 --- --- 8 nC
ID Continuous Drain Current TC=25, VGS @ 10V --- --- 60 A
ID Continuous Drain Current TC=100, VGS @ 10V --- --- 50 A
ID Continuous Drain Current TA=25, VGS @ 10V --- --- 30 A
ID Continuous Drain Current TA=70, VGS @ 10V --- --- 25 A
IDM Pulsed Drain Current --- --- --- 192 A
EAS Single Pulse Avalanche Energy --- --- --- 144.7 mJ
IAS Avalanche Current --- --- --- 53.8 A
PD Total Power Dissipation TC=25 --- --- 62.5 W
PD Total Power Dissipation TA=25 --- --- 6 W
TSTG Storage Temperature Range --- -55 --- 175
TJ Operating Junction Temperature Range --- -55 --- 175
RJA Thermal Resistance Junction-Ambient (t 10s) --- --- 25 /W
RJC Thermal Resistance Junction-Case --- --- --- 2.4 /W

2410121918_GOODWORK-60N03-TO-252_C5818969.pdf
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