NPN bipolar transistor Guangdong Hottech 2SC3356 with 12V collector emitter voltage in SOT23 package
Key Attributes
Model Number:
2SC3356
Product Custom Attributes
Emitter-Base Voltage(Vebo):
3V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
7GHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
12V
Operating Temperature:
-
Mfr. Part #:
2SC3356
Package:
SOT-23
Product Description
Product Overview
The 2SC3356 is an NPN bipolar transistor designed for low-noise amplifier applications in UHF, VHF, and CATV bands. It offers high power gain and is available in a surface-mount SOT-23 package.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Product Name: 2SC3356
- Type: BIPOLAR TRANSISTOR (NPN)
- Case Material: Molded Plastic
- UL Flammability Classification: 94V-0
- Origin: Shenzhen, China (implied by company name)
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Base Voltage | VCBO | 20 | V | |
| Collector-Emitter Voltage | VCEO | 12 | V | |
| Emitter-Base Voltage | VEBO | 3 | V | |
| Collector Current | IC | 100 | mA | |
| Collector Power Dissipation | PC | 200 | mW | TA = 25C |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| Collector-base breakdown voltage | V(BR)CBO | 20 | V | IC=10uAIE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | 12 | V | IC=1mAIB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | 3 | V | IE=10uAIC=0 |
| Collector cut-off current | ICBO | 1 | uA | VCB=10V, IE=0 |
| Emitter cut-off current | IEBO | 1 | uA | VEB=1V, IC=0 |
| DC current gain | hFE | 50 - 300 | VCE=10V, IC=20mA | |
| Insertion Power Gain | |S21e|2 | 11.5 | dB | VCE=10V, IC=20mA, f=1GHz |
| Transition frequency | fT | 7 | GHz | VCE=10V, IC=20mA |
| Collector output capacitance | Cob | 0.55 - 1.0 | pF | VCB=10V, IE=0, f=1MHz |
| Noise figure | NF | 1 - 2 | dB | VCE=10V, IC=7mA, f=1GHz |
2410122026_Guangdong-Hottech-2SC3356_C193010.pdf
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