synchronous buck converter MOSFET with low gate charge and high cell density GOODWORK 100N03NF
Key Attributes
Model Number:
100N03NF
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4.7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
282pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
62.5W
Input Capacitance(Ciss):
2.1nF@15V
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
100N03NF
Package:
PDFN5x6-8
Product Description
Product Overview
The 100N03NF is a high cell density N-channel MOSFET featuring excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. It meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers full function reliability.
Product Attributes
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| VDS | Drain-Source Voltage | - | - | 30 | V | |
| VGS | Gate-Source Voltage | - | - | ±20 | V | |
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | - | - | 100 | A | |
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | - | - | 50 | A | |
| ID@TA=25 | Continuous Drain Current, VGS @ 10V | - | - | 30 | A | |
| ID@TA=70 | Continuous Drain Current, VGS @ 10V | - | - | 25 | A | |
| IDM | Pulsed Drain Current | - | - | 162 | A | |
| EAS | Single Pulse Avalanche Energy | - | - | 144.7 | mJ | |
| IAS | Avalanche Current | - | - | 53.8 | A | |
| PD@TC=25 | Total Power Dissipation | - | - | 62.5 | W | |
| PD@TA=25 | Total Power Dissipation | - | - | 6.24 | W | |
| TSTG | Storage Temperature Range | -55 | - | 175 | ||
| TJ | Operating Junction Temperature Range | -55 | - | 175 | ||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V,ID=250A | 30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS =30V, VGS = 0V | - | - | 1.0 | µA |
| IGSS | Gate to Body Leakage Current | VDS =0V,VGS = ±20V | - | - | ±100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250µA | 1.0 | 1.5 | 2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS =10V, ID =30A | - | 3.5 | 4.7 | mΩ |
| RDS(on) | Static Drain-Source on-Resistance | VGS =4.5V, ID =20A | - | 7.0 | 10 | mΩ |
| Ciss | Input Capacitance | VDS =15V, VGS =0V, f = 1.0MHz | - | 2100 | - | pF |
| Coss | Output Capacitance | VDS =15V, VGS =0V, f = 1.0MHz | - | 326 | - | pF |
| Crss | Reverse Transfer Capacitance | VDS =15V, VGS =0V, f = 1.0MHz | - | 282 | - | pF |
| Qg | Total Gate Charge | VDS =15V, ID =30A, VGS =10V | - | 45 | - | nC |
| Qgs | Gate-Source Charge | VDS =15V, ID =30A, VGS =10V | - | 3 | - | nC |
| Qgd | Gate-Drain(Miller) Charge | VDS =15V, ID =30A, VGS =10V | - | 15 | - | nC |
| td(on) | Turn-on Delay Time | VDS=15V, ID=30A, RGEN=3Ω, VGS =10V | - | 21 | - | ns |
| tr | Turn-on Rise Time | VDS=15V, ID=30A, RGEN=3Ω, VGS =10V | - | 32 | - | ns |
| td(off) | Turn-off Delay Time | VDS=15V, ID=30A, RGEN=3Ω, VGS =10V | - | 59 | - | ns |
| tf | Turn-off Fall Time | VDS=15V, ID=30A, RGEN=3Ω, VGS =10V | - | 34 | - | ns |
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | 50 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | 200 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS = 0V, IS=30A | - | - | 1.2 | V |
| trr | Body Diode Reverse Recovery Time | IF=20A,dI/dt=100A/µs | - | 15 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF=20A,dI/dt=100A/µs | - | 4 | - | nC |
| RJA | Thermal Resistance Junction-Ambient | (t ≤10s) | --- | --- | 25 | °C/W |
| RJC | Thermal Resistance Junction-Case | --- | --- | 2.4 | °C/W |
2408021727_GOODWORK-100N03NF_C21713989.pdf
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