High cell density trenched MOSFET GOODWORK AO3422 offering power switching and load switch capabilities
Key Attributes
Model Number:
AO3422
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
RDS(on):
75mΩ@10V,2A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF@15V
Input Capacitance(Ciss):
511pF@15V
Pd - Power Dissipation:
1W
Output Capacitance(Coss):
38pF
Gate Charge(Qg):
5nC@4.5V
Mfr. Part #:
AO3422
Package:
SOT-23-3L
Product Description
Product Overview
The AO3422 is a high cell density trenched N-channel MOSFET designed for efficient power switching and load switch applications. It offers excellent RDS(ON) and efficiency, meeting RoHS and Green Product requirements with full functional reliability.
Product Attributes
- Green Device Available
- Super Low Gate Charge
- Excellent Cdv/dt effect decline
- Advanced high cell density Trench technology
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | VDS Drain-Source Voltage | 60 | V | |||
| VGS Gate-Source Voltage | ±20 | V | ||||
| ID@TA=25 Continuous Drain Current, VGS @ 10V1 | 3.0 | A | ||||
| ID@TA=70 Continuous Drain Current, VGS @ 10V1 | 1.8 | A | ||||
| IDM Pulsed Drain Current2 | 9.2 | A | ||||
| Thermal Data | PD@TA=25 Total Power Dissipation3 | 1 | W | |||
| TSTG Storage Temperature Range | -55 | 150 | ||||
| TJ Operating Junction Temperature Range | -55 | 150 | ||||
| Electrical Characteristics | BVDSS Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | V | ||
| RDS(ON) Static Drain-Source On-Resistance2 | VGS=10V , ID=2A | 75 | mΩ | |||
| Diode Characteristics | VSD Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | 1.2 | V |
2507011715_GOODWORK-AO3422_C49274009.pdf
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