Low On Resistance Power Management MOSFET Guangdong Hottech SI2300 Ideal for Load Switch Circuits
Key Attributes
Model Number:
SI2300
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.8A
Operating Temperature -:
-
RDS(on):
40mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
780mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
115pF
Number:
1 N-channel
Output Capacitance(Coss):
144pF
Input Capacitance(Ciss):
888pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
16.8nC@10V
Mfr. Part #:
SI2300
Package:
SOT-23
Product Description
Product Overview
This N-Channel Low Voltage MOSFET is designed for low power DC-to-DC converter and load switch applications. It features ultra-low on-resistance, making it an efficient choice for power management circuits.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Model: SI2300
- Package: SOT-23
- Case Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Weight: 0.008 grams (approximate)
- Email: hkt@heketai.com
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| MAXIMUM RATINGS | ||||
| Drain-source voltage | VDS | 20 | V | |
| Gate-source voltage | VGS | ±10 | V | |
| Continuous drain current | ID | 4.5 | A | |
| Pulsed drain current (Note 1) | IDM | 15 | A | |
| Power dissipation | PD | 1.25 | W | (TA = 25°C) |
| Thermal resistance from Junction to ambient | RθJA | 100 | °C/W | |
| Junction temperature | TJ | 150 | °C | |
| Storage temperature | TSTG | -55 ~+150 | °C | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source breakdown voltage | V(BR)DSS | 20 | V | VGS=0V, ID=250μA |
| Zero gate voltage drain current | IDSS | 1 | uA | VDS=20V, VGS=0V |
| Gate-body leakage current | IGSS | ±100 | nA | VDS=0V, VGS=±10V |
| Gate-threshold voltage (note 1) | VGS(th) | 0.5 - 1.5 | V | VDS=VGS, ID=250μA (Typ: 0.78) |
| Drain-source on-resistance (note 1) | RDS(ON) | 32 - 40 | mΩ | VGS=4.5V, ID=4.5A |
| 50 - 60 | mΩ | VGS=2.5V, ID=4A | ||
| 62 - 75 | mΩ | VGS=1.8V, ID=1A | ||
| On-State Drain Current | ID(ON) | 18 | A | VDS=5V, VGS=4.5V |
| Forward transconductance (note 1) | gFS | 5 | S | VDS=5V, ID=5A |
| Input capacitance | Ciss | 888 | pF | VDS=15V, VGS=0V, f=1MHz |
| Output capacitance | Coss | 144 | pF | VDS=15V, VGS=0V, f=1MHz |
| Reverse transfer capacitance | Crss | 115 | pF | VDS=15V, VGS=0V, f=1MHz |
| Turn-on delay time | td(on) | 31.8 | nS | VDD=10V, VGS=10V, RGEN=6Ω,RL=10Ω |
| Turn-on rise time | tr | 14.5 | nS | VDD=10V, VGS=10V, RGEN=6Ω,RL=10Ω |
| Turn-off delay time | td(off) | 50.3 | nS | VDD=10V, VGS=10V, RGEN=6Ω,RL=10Ω |
| Turn-off fall time | tf | 31.9 | nS | VDD=10V, VGS=10V, RGEN=6Ω,RL=10Ω |
| Total gate charge | Qg | 16.8 | nC | VDD=15V,VGS=10V,ID=5A |
| Gate-source charge | Qgs | 2.5 | nC | VDD=15V,VGS=10V,ID=5A |
| Gate-drain charge | Qgd | 5.4 | nC | VDD=15V,VGS=10V,ID=5A |
| Diode forward voltage (note 1) | VSD | 1.25 | V | IS=0.83A, VGS=0V |
| Diode forward current | IS | 0.82 - 1.2 | A | |
2410122025_Guangdong-Hottech-SI2300_C181085.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
