Compact electronic PNP transistor Guangdong Hottech MMBT3906 designed for surface mount applications
Key Attributes
Model Number:
MMBT3906
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3906
Package:
SOT-23
Product Description
Product Overview
The MMBT3906 is a PNP bipolar transistor designed for surface mount applications. It serves as a complementary device to the MMBT3904 and is housed in a SOT-23 package, making it suitable for compact electronic designs.
Product Attributes
- Brand: Hekketai (SHENZHEN HOTTECH ELECTRONICS CO.,LTD)
- Origin: Shenzhen, China
- Case Material: Molded Plastic
- UL Flammability Classification: 94V-0
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Base Voltage | VCBO | -40 | V | |
| Collector-Emitter Voltage | VCEO | -40 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Collector Current | IC | -200 | mA | |
| Collector Power Dissipation | PC | 200 | mW | |
| Thermal Resistance Junction To Ambient | RJA | 625 | C/W | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| Collector-base breakdown voltage | V(BR)CBO | -40 | V | IC=-10uAIE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | -40 | V | IC=-1mAIB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-10uAIC=0 |
| Collector cut-off current | ICBO | -0.1 | uA | VCB=-40V, IE=0 |
| Collector cut-off current | ICEX | -50 | nA | VCE=-30V, VBE(OFF)=-3V |
| Emitter cut-off current | IEBO | -0.1 | uA | VEB=-5V, IC=0 |
| DC current gain (hFE1) | hFE1 | 100-300 | VCE=-1V, IC=-10mA | |
| DC current gain (hFE2) | hFE2 | 60 | VCE=-1V, IC=-50mA | |
| DC current gain (hFE3) | hFE3 | 30 | VCE=-2V, IC=-100mA | |
| Collector-emitter saturation voltage | VCE(sat) | -0.3 | V | IC=-50mAIB=-5mA |
| Base-emitter saturation voltage | VBE(sat) | -0.95 | V | IC=-50mAIB=-5mA |
| Transition frequency | fT | 300 | MHz | VCE=-20V,IC=-10mA,f=100MHz |
| Delay time | td | 35 | ns | VCC=-3V, VBE(OFF)=-0.5V, IC=-10mAIB1==IB2=-1mA |
| Rise time | tr | 35 | ns | VCC=-3V,IC=-10mA IB1=IB2=-1mA |
| Storage time | tS | 225 | ns | VCC=-3V,IC=-10mA IB1=IB2=-1mA |
| Fall time | tf | 75 | ns | VCC=-3V,IC=-10mA IB1=IB2=-1mA |
| hFE Classification Rank L | 100-200 | |||
| hFE Classification Rank H | 200-300 | |||
| Marking | 2A |
2410122030_Guangdong-Hottech-MMBT3906_C181120.pdf
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