Power Field Effect Transistor Featuring Trench DMOS Technology GOODWORK 2SK3018 N Channel Enhancement Mode Device
Key Attributes
Model Number:
2SK3018
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
300mA
RDS(on):
1.5Ω@10V
Operating Temperature -:
-55℃~+125℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
313mW
Input Capacitance(Ciss):
46pF@30V
Mfr. Part #:
2SK3018
Package:
SOT-23
Product Description
Product Overview
These N-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology. This technology is optimized for minimal on-state resistance, superior switching performance, and robust high energy pulse handling in avalanche and commutation modes. They are ideal for high efficiency, fast switching applications.
Product Attributes
- Brand: DEMACHEL
- Model: 2SK3018
- Technology: Trench DMOS
- Device Type: N-Channel Enhancement Mode Power Field Effect Transistor
- Certifications: Green Device Available
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | |||||
| BVDSS | Drain-Source Breakdown Voltage (VGS=0V , ID=250uA) | 30 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient (Reference to 25 , ID=1mA) | --- | 0.05 | --- | V/ |
| IDSS | Drain-Source Leakage Current (VDS=30V , VGS=0V , TJ=50) | --- | --- | 100 | nA |
| IDSS | Drain-Source Leakage Current (VDS=30V , VGS=0V , TJ=85) | --- | --- | 400 | nA |
| IGSS | Gate-Source Leakage Current (VGS=20V , VDS=0V) | --- | --- | 6 | uA |
| RDS(ON) | Static Drain-Source On-Resistance (VGS=10V , ID=0.3A) | --- | 1.5 | 3 | |
| RDS(ON) | Static Drain-Source On-Resistance (VGS=4.5V , ID=0.2A) | --- | 1.6 | 4 | V |
| VGS(th) | Gate Threshold Voltage (VGS=VDS , ID =250uA) | 0.8 | 1.1 | 1.6 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | 3 | --- | mV/ |
| Ciss | Input Capacitance (VDS=30V , VGS=0V , F=1MHz) | --- | 23 | 46 | pF |
| Coss | Output Capacitance | --- | 16 | 32 | pF |
| Crss | Reverse Transfer Capacitance | --- | 10 | 20 | pF |
| IS | Continuous Source Current (VG=VD=0V , Force Current) | --- | --- | 300 | mA |
| ISM | Pulsed Source Current | --- | --- | 600 | mA |
| VSD | Diode Forward Voltage (VGS=0V , IS=0.2A , TJ=25) | --- | --- | 1.2 | V |
| Electrical Characteristics (TJ=25 , unless otherwise noted) | |||||
| ID | Drain Current Continuous (TA=25) | --- | --- | 300 | mA |
| ID | Drain Current Continuous (TA=70) | --- | --- | 240 | mA |
| IDM | Drain Current Pulsed | --- | --- | 1.2 | A |
| PD | Power Dissipation (TC=25) | --- | --- | 313 | mW |
| PD | Power Dissipation Derate above 25 | --- | --- | 2.5 | mW/ |
| TSTG | Storage Temperature Range | -55 | --- | 150 | |
| TJ | Operating Junction Temperature Range | -55 | --- | 125 | |
| Thermal Characteristics | |||||
| RJA | Thermal Resistance Junction to ambient (Tc=25 unless otherwise noted) | --- | 400 | --- | /W |
2412061650_GOODWORK-2SK3018_C41399455.pdf
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