load switch P Channel MOSFET Guangdong Hottech AO3415 with low gate voltage operation and minimal RDS ON resistance
Key Attributes
Model Number:
AO3415
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-
RDS(on):
65mΩ@1.8V,2A
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
115pF
Number:
1 P-Channel
Input Capacitance(Ciss):
905pF
Output Capacitance(Coss):
150pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
AO3415
Package:
SOT-23
Product Description
Product Overview
The AO3415 is a P-Channel MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 1.8V. This device is suitable for load switch applications.
Product Attributes
- Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD
- Product Name: AO3415
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| Drain-Source Breakdown Voltage | BVDSS | ID=-250 A, VGS=0V | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V | -1 | uA | ||
| TJ=55C | -5 | uA | ||||
| Gate-Body leakage current | IGSS | VDS=0V, VGS= 8V | 10 | uA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250 | -0.3 | -0.57 | -0.9 | V |
| On state drain current | ID(ON) | VGS=-4.5V, VDS=-5V | -30 | A | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-4A | 34 | 41 | m | |
| TJ=125C | 49 | 59 | m | |||
| VGS=-2.5V, ID=-4A | 42 | 53 | m | |||
| VGS=-1.8V, ID=-2A | 52 | 65 | m | |||
| VGS=-1.5V, ID=-1A | 61 | m | ||||
| Forward Transconductance | gFS | VDS=-5V, ID=-4A | 20 | S | ||
| Diode Forward Voltage | VSD | IS=-1A,VGS=0V | -0.64 | -1 | V | |
| Maximum Body-Diode Continuous Current | IS | -2 | A | |||
| Input Capacitance | Ciss | VGS=0V, VDS=-10V, f=1MHz | 600 | 751 | pF | |
| Output Capacitance | Coss | 80 | 115 | pF | ||
| Reverse Transfer Capacitance | Crss | 48 | 80 | pF | ||
| Gate resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 6 | 13 | ||
| Total Gate Charge | Qg | VGS=-4.5V, VDS=-10V, ID=-4A | 7.4 | 9.3 | nC | |
| Gate Source Charge | Qgs | 0.8 | 1 | nC | ||
| Gate Drain Charge | Qgd | 1.3 | 2.2 | nC | ||
| Turn-On DelayTime | tD(on) | VGS=-4.5V, VDS=-10V, RL=2.5 , RGEN=3 | 13 | ns | ||
| Turn-On Rise Time | tr | 9 | ns | |||
| Turn-Off DelayTime | tD(off) | 19 | ns | |||
| Turn-Off Fall Time | tf | 29 | ns | |||
| Body Diode Reverse Recovery Time | trr | IF=-4A, dI/dt=500A/ us | 20 | 26 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF=-4A, dI/dt=500A/ us | 40 | 51 | nC | |
| Maximum Junction-to-Ambient Thermal Resistance | RJA | TA=25C, t 10s | 65 | 80 | C/W | |
| TA=70C, Steady-State | 85 | 100 | C/W | |||
| Maximum Junction-to-Lead Thermal Resistance | RJL | Steady-State | 43 | 52 | C/W |
2410122025_Guangdong-Hottech-AO3415_C181094.pdf
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