Trenched P channel MOSFET GOODWORK 30P03 offering performance in synchronous buck converter circuits
Key Attributes
Model Number:
30P03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
35A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
139pF
Number:
1 P-Channel
Output Capacitance(Coss):
155pF
Pd - Power Dissipation:
4W
Input Capacitance(Ciss):
1.2nF
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
30P03
Package:
TO-252
Product Description
Product Overview
The 30P03 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approved.
Product Attributes
- Device Type: P-Ch MOSFET
- Voltage Rating: 30V
- Certifications: RoHS, Green Device Available
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Symbol | Parameter | Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V | 10s Steady State | -35 | A | ||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V | Steady State | -17 | A | ||
| IDM | Pulsed Drain Current | 2 | -80 | A | ||
| EAS | Single Pulse Avalanche Energy | 3 | 35 | mJ | ||
| IAS | Avalanche Current | -10 | A | |||
| PD@TA=25 | Total Power Dissipation | 4 | 4.0 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Electrical Characteristics (TJ=25 unless otherwise specified) | ||||||
| Off Characteristic | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID= -250A | -30 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = -30V, VGS = 0V | -1 | μA | ||
| IGSS | Gate to Body Leakage Current | VDS =0V, VGS = ±20V | ±100 | nA | ||
| On Characteristic | ||||||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID= -250μA | -1.0 | -1.5 | -2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance | Note3, VGS =-10V, ID =-9A | 17 | mΩ | ||
| RDS(on) | Static Drain-Source on-Resistance | Note3, VGS =-4.5V, ID =-5A | 27 | 38 | mΩ | |
| Dynamic Characteristic | ||||||
| Ciss | Input Capacitance | VDS = -15V, VGS = 0V, f = 1.0MHz | 1200 | pF | ||
| Coss | Output Capacitance | 155 | pF | |||
| Crss | Reverse Transfer Capacitance | 139 | pF | |||
| Qg | Total Gate Charge | VDS= -15V, ID = -8A, VGS = -10V | 52 | nC | ||
| Qgs | Gate-Source Charge | 9.8 | nC | |||
| Qgd | Gate-Drain (Miller) Charge | 8.3 | nC | |||
| Switching Characteristic | ||||||
| td(on) | Turn-on Delay Time | VDD = -15V, ID = -1A, VGS=-10V, RGEN=6Ω | 13 | ns | ||
| tr | Turn-on Rise Time | 15 | ns | |||
| td(off) | Turn-off Delay Time | 198 | ns | |||
| tf | Turn-off Fall Time | 98 | ns | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | -35 | A | |||
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | -80 | A | |||
| VSD | Drain to Source Diode Forward Voltage | VGS = 0V, IS = -9A | -1.2 | V | ||
2410121651_GOODWORK-30P03_C22470946.pdf
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