power switching MOSFET Guangdong Hottech AO3420 with low on resistance and compact surface mount design
Key Attributes
Model Number:
AO3420
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-
RDS(on):
24mΩ@10V,6A
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
105pF
Number:
1 N-channel
Output Capacitance(Coss):
125pF
Input Capacitance(Ciss):
630pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
12.5nC@10V
Mfr. Part #:
AO3420
Package:
SOT-23
Product Description
Product Overview
The AO3420 is an N-channel low voltage MOSFET designed for PWM and load switch applications. It features ultra-low on-resistance, making it efficient for various power management tasks. This surface mount device comes in a SOT-23 package.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Case Material: Molded Plastic
- UL Flammability Classification Rating: 94V-0
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Drain-source voltage | VDS | 20 | V | |
| Gate-source voltage | VGS | 12 | V | |
| Continuous drain current | ID | 6 | A | TA=25C |
| 5 | A | TA=70C | ||
| Pulsed drain current | IDM* | 30 | A | |
| Power dissipation | PD | 1.4 | W | TA=25C |
| 0.9 | W | TA=70C | ||
| Thermal resistance from Junction to ambient | RJA | 125 | C/W | |
| Junction temperature | TJ | 150 | C | |
| Storage temperature | TSTG | -55 ~+150 | C | |
| Drain-Source breakdown voltage | V(BR)DSS* | 20 | V | VGS=0V, ID=250A |
| Zero gate voltage drain current | IDSS* | 1 | uA | VDS=20V, VGS=0V |
| Gate-body leakage current | IGSS* | 100 | nA | VDS=0V, VGS=12V |
| Gate-threshold voltage | VGS(th)* | 0.4 - 1.1 | V | VDS=VGS, ID=250A |
| Drain-source on-resistance | RDS(ON)* | 16 - 24 | m | VGS=10V, ID=6A |
| 18 - 27 | m | VGS=4.5V, ID=5A | ||
| 23 - 42 | m | VGS=2.5V, ID=4A | ||
| 31 - 55 | m | VGS=1.8V, ID=2A | ||
| Forward transconductance | gFS | 25 | S | VDS=5V, ID=6A |
| Gate resistance | Rg | 0.8 - 2.6 | VGS=0V, VDS=0V, f=1MHz | |
| Input capacitance | Ciss | 420 - 630 | pF | VDS=10V, VGS=0V, f=1MHz |
| Output capacitance | Coss | 65 - 125 | pF | VDS=10V, VGS=0V, f=1MHz |
| Reverse transfer capacitance | Crss | 45 - 105 | pF | VDS=10V, VGS=0V, f=1MHz |
| Turn-on delay time | td(on) | 3 | nS | VDS=10V, VGS=10V, RGEN=3, RL=1.7 |
| Turn-on rise time | tr | 7.5 | nS | |
| Turn-off delay time | td(off) | 20 | nS | |
| Turn-off fall time | tf | 6 | nS | |
| Total gate charge | Qg | 12.5 | nC | VDS=10V,VGS=10V,ID=6A |
| Gate-source charge | Qgs | 1 | nC | |
| Gate-drain charge | Qg d | 2 | nC | |
| Diode forward voltage | VSD | 0.7 - 1 | V | IS=1A, VGS=0V |
| Diode forward current | IS | 2 | A | |
| Body Diode Reverse Recovery Time | trr | 14 | nS | IF=6A, dI/dt=100A/us |
| Body Diode Reverse Recovery Charge | Qrr | 6 | nC | IF=6A, dI/dt=100A/us |
2410122025_Guangdong-Hottech-AO3420_C181095.pdf
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