P Channel Enhancement Mode Power Transistor GOODWORK SI2309 Utilizing Advanced Trench DMOS Technology
Key Attributes
Model Number:
SI2309
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
160mΩ@10V,2A
Gate Threshold Voltage (Vgs(th)):
1.9V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF@30V
Input Capacitance(Ciss):
425pF@30V
Pd - Power Dissipation:
1.56W
Output Capacitance(Coss):
35pF
Gate Charge(Qg):
8.2nC@10V
Mfr. Part #:
SI2309
Package:
SOT-23
Product Description
Product Overview
These P-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology, specifically engineered to minimize on-state resistance, deliver superior switching performance, and provide robust high energy pulse handling in avalanche and commutation modes. They are ideally suited for high efficiency, fast switching applications.
Product Attributes
- Brand: DEMACHEL
- Device Type: SOT-23
- Technology: Trench DMOS
- Features: Improved dv/dt capability, Fast switching, Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current Continuous (TA=25) | -2 | A | |||
| ID | Drain Current Continuous (TA=70) | -1.6 | A | |||
| IDM | Drain Current Pulsed | -8 | A | |||
| PD | Power Dissipation (TA=25) | 1.56 | W | |||
| PD | Power Dissipation Derate above 25 | 0.012 | W/ | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Characteristics | ||||||
| RJA | Thermal Resistance Junction to ambient | --- | 80 | /W | ||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | --- | -0.05 | --- | V/ |
| IDSS | Drain-Source Leakage Current | VDS=-60V , VGS=0V , TJ=25 | --- | --- | -1 | uA |
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=125 | --- | --- | -10 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| On Characteristics | ||||||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-2A | --- | 160 | 200 | m |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-4.5V , ID=-1.5A | --- | 200 | 240 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID=-250uA | -1.0 | -1.9 | -2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | 5 | --- | mV/ | |
| gfs | Forward Transconductance | VDS=-10V , ID=-2A | --- | 3.5 | --- | S |
| Dynamic and switching Characteristics | ||||||
| Qg | Total Gate Charge | VDS=-30V , VGS=-10V , ID=-2A | --- | 8.2 | --- | nC |
| Qgs | Gate-Source Charge | --- | 1.8 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 1.5 | --- | nC | |
| Td(on) | Turn-On Delay Time | VDD=-30V , VGS=-10V , RG=6 ID=-1A | --- | 5.2 | --- | ns |
| Tr | Rise Time | --- | 19 | --- | ns | |
| Td(off) | Turn-Off Delay Time | --- | 35 | --- | ns | |
| Tf | Fall Time | --- | 10.6 | --- | ns | |
| Ciss | Input Capacitance | VDS=-30V , VGS=0V , F=1MHz | --- | 425 | --- | pF |
| Coss | Output Capacitance | --- | 35 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 20 | --- | pF | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | --- | -2 | A |
| ISM | Pulsed Source Current | --- | --- | -4 | A | |
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1.2 | V |
2509161435_GOODWORK-SI2309_C51912420.pdf
Related Products
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
