switching N Channel transistor GOODWORK AO3404A GK suitable for load switch and handheld instrument
Key Attributes
Model Number:
AO3404A-GK
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6A
RDS(on):
18mΩ@10V,5.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
32pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
345pF@25V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
4.1nC@4.5V
Mfr. Part #:
AO3404A-GK
Package:
SOT-23-3L
Product Description
Product Overview
These N-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology, specifically engineered to minimize on-state resistance, deliver superior switching performance, and withstand high energy pulses in avalanche and commutation modes. They are well-suited for high efficiency fast switching applications.
Product Attributes
- Brand: AO
- Model: AO3404A
- Technology: Trench DMOS
- Device Type: N-Channel enhancement mode power field effect transistor
- Features: Improved dv/dt capability, Fast switching, Green Device Available
- Applications: MB / VGA / Vcore Load Switch, Hand-Held Instrument
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | VDS Drain-Source Voltage | 30 | V | |||
| VGS Gate-Source Voltage | 20 | V | ||||
| ID Drain Current Continuous (TC=25) | 6.0 | A | ||||
| ID Drain Current Continuous (TC=100) | 3.8 | A | ||||
| IDM Drain Current Pulsed1 | 23 | A | ||||
| Power Dissipation | PD Power Dissipation (TC=25) | 1.4 | W | |||
| Power Dissipation Derate above 25 | 0.012 | W/ | ||||
| PD Power Dissipation (TC=25) | 1.4 | W | ||||
| Temperature Range | TSTG Storage Temperature Range | -55 | 150 | |||
| TJ Operating Junction Temperature Range | -55 | 150 | ||||
| Thermal Characteristics | RJA Thermal Resistance Junction to ambient | --- | --- | 80 | /W | |
| RJC Thermal Resistance Junction to Case | --- | --- | --- | /W | ||
| RJA Thermal Resistance Junction to ambient | --- | --- | 80 | /W | ||
| Off Characteristics | BVDSS Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| BVDSS/TJ BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.04 | --- | V/ | |
| IDSS Drain-Source Leakage Current | VDS=30V , VGS=0V , TJ=25 | --- | --- | 1 | uA | |
| IDSS Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=125 | --- | --- | 10 | uA | |
| IGSS Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA | |
| On Characteristics | RDS(ON) Static Drain-Source On-Resistance3 | VGS=10V , ID=5.5A | --- | 18 | 25 | m |
| RDS(ON) Static Drain-Source On-Resistance3 | VGS=4.5V , ID=4A | --- | 27 | 40 | m | |
| VGS(th) Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.6 | 2.5 | V | |
| VGS(th) VGS(th) Temperature Coefficient | --- | -4 | --- | mV/ | ||
| Dynamic and switching Characteristics | Qg Total Gate Charge3,4 | VDS=15V , VGS=4.5V , ID=6A | --- | 4.1 | nC | |
| Qgs Gate-Source Charge3,4 | --- | 1 | nC | |||
| Qgd Gate-Drain Charge3,4 | --- | 2.1 | nC | |||
| Td(on) Turn-On Delay Time3,4 | VDD=15V , VGS=10V , RG=6 ID=1A | --- | 2.8 | ns | ||
| Tr Rise Time3,4 | --- | 7.2 | ns | |||
| Td(off) Turn-Off Delay Time3,4 | --- | 15.8 | ns | |||
| Tf Fall Time3,4 | --- | 4.6 | ns | |||
| Capacitance | Ciss Input Capacitance | VDS=25V , VGS=0V , F=1MHz | --- | 345 | pF | |
| Coss Output Capacitance | --- | 55 | pF | |||
| Crss Reverse Transfer Capacitance | --- | 32 | pF | |||
| Drain-Source Diode Characteristics | IS Continuous Source Current | VG=VD=0V , Force Current | --- | --- | 6.0 | A |
| ISM Pulsed Source Current3 | --- | --- | 12 | A | ||
| VSD Diode Forward Voltage3 | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V |
2504101957_GOODWORK-AO3404A-GK_C42456338.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
