Low noise NPN transistor GUOXIN JIAPIN SEMICONDUCTOR FCR951 ideal for VHF UHF and CATV high frequency
Key Attributes
Model Number:
FCR951
Product Custom Attributes
Emitter-Base Voltage(Vebo):
1.5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
8GHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
10V
Mfr. Part #:
FCR951
Package:
SOT-23
Product Description
Product Description
The FCR951 is an ultra-high frequency, low-noise NPN silicon epitaxial bipolar transistor manufactured by Shenzhen Guoxin Jiapin Semiconductor Co., Ltd. Utilizing a planar process, it offers high power gain, a low noise figure, a wide dynamic range, and ideal current characteristics. Packaged in a SOT-23 surface-mount package, it is primarily used in VHF, UHF, and CATV high-frequency broadband low-noise amplifiers.
Product Attributes
- Brand: Guoxin Jiapin ()
- Origin: Shenzhen, China
- Material: Silicon Epitaxial Bipolar
- Packaging: SOT-23
Technical Specifications
| Parameter | Symbol | Min | Typical | Max | Unit | Test Conditions |
| Collector-Base Breakdown Voltage | VCBO | 20 | V | IC=1.0A | ||
| Collector-Emitter Breakdown Voltage | VCEO | 10 | V | |||
| Emitter-Base Breakdown Voltage | VEBO | 1.5 | V | |||
| Collector Current | IC | 100 | mA | |||
| Power Dissipation | PC | 200 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -65 | +150 | |||
| Collector-Base Leakage Current | ICBO | 0.1 | A | VCB=10V | ||
| Emitter-Base Leakage Current | IEBO | 0.1 | A | VEB=1V | ||
| DC Current Gain | HFE | 90 | 150 | 250 | VCE=6V,IC=15mA | |
| Gain Bandwidth Product | fT | 8 | GHz | VCE=6V,IC=30mA,f=1GHz | ||
| Output Feedback Capacitance | Cre | 0.65 | pF | VCB=10V,IE=0mA,f=1MHz | ||
| Power Gain | | S21e | | 12 | dB | VCE=6V,IC=30mA,f=1GHz | ||
| Noise Figure | NF | 2 | dB | VCE=6V,IC=5mA,f=1GHz |
| Product Number | Standard Packaging | Binning | Marking | HFE Range |
| FCR951 | 3K/Reel | B, C, D | W2 | 90-140 (B), 120-180 (C), 170-250 (D) |
2410121237_GUOXIN-JIAPIN-SEMICONDUCTOR-FCR951_C2992563.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
