High gain low noise transistor GUOXIN JIAPIN SEMICONDUCTOR FC3356 designed for ultra high frequency broadband amplifier

Key Attributes
Model Number: FC3356
Product Custom Attributes
Emitter-Base Voltage(Vebo):
2.5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
7GHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
12V
Mfr. Part #:
FC3356
Package:
SOT-23
Product Description

Product Overview

The FC3356 is an ultra-high frequency, low-noise NPN silicon epitaxial bipolar transistor manufactured by Guo Xin Jia Pin SEMICONDUTOR. It features high power gain, a low noise figure, a wide dynamic range, and ideal current characteristics. Packaged in a SOT-23/SC-59 surface-mount package, it is primarily used in VHF, UHF, and CATV high-frequency broadband low-noise amplifiers.

Product Attributes

  • Brand: (Guo Xin Jia Pin SEMICONDUTOR)
  • Origin: China
  • Material: NPN Silicon Epitaxial Bipolar
  • Packaging: SOT-23/SC-59

Technical Specifications

ParameterSymbolMinTypicalMaxUnitTest Conditions
Collector-Base Breakdown VoltageVCBO20VIC=1.0A
Collector-Emitter Breakdown VoltageVCEO12V
Emitter-Base Breakdown VoltageVEBO2.5V
Collector CurrentIC100mA
Power DissipationPC200mW
Junction TemperatureTj150
Storage TemperatureTstg-65+150
Collector-Base Leakage CurrentICBO0.1AVCB=10V
Emitter-Base Leakage CurrentIEBO0.1AVEB=1V
DC Current GainHFE90150250VCE=10V,IC=20mA
Gain Bandwidth ProductfT67GHzVCE=10V,IC=20mA
Output Feedback CapacitanceCre0.65pFVCB=10V,IE=0mA,f=1MHz
Power Gain| S21e |21111.5dBVCE=10V,IC=20mA,f=1GHz
Noise FigureNF1.31.8dBVCE=10V,IC=7mA,f=1GHz
HFE BinProduct NumberStandard PackagingSorting
BFC33563K/Reel90-130
CFC33563K/Reel120-180
DFC33563K/Reel170-250

2410121230_GUOXIN-JIAPIN-SEMICONDUCTOR-FC3356_C2992548.pdf

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