Power Transistor GOODWORK 2SK3019 N Channel With Enhanced Switching And High Energy Pulse Withstand
Key Attributes
Model Number:
2SK3019
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
200mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
16pF
Input Capacitance(Ciss):
23pF
Pd - Power Dissipation:
200mW
Gate Charge(Qg):
-
Mfr. Part #:
2SK3019
Package:
SOT-523
Product Description
Product Overview
These N-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology, engineered to minimize on-state resistance, deliver superior switching performance, and provide robust high energy pulse withstand capability in avalanche and commutation modes. These devices are ideally suited for high efficiency, fast switching applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings (Tc=25 unless otherwise noted) | ||||||
| BVDSS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Drain Current Continuous (TA=25) | 200 | mA | |||
| ID | Drain Current Continuous (TA=70) | 150 | mA | |||
| IDM | Drain Current Pulsed1 | 0.8 | A | |||
| PD | Power Dissipation (TC=25) | 200 | mW | |||
| Power Dissipation Derate above 25 | 2.0 | mW/ | ||||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Characteristics | ||||||
| RJA | Thermal Resistance Junction to ambient | 400 | /W | |||
| Off Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | V | ||
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.05 | V/ | ||
| IDSS | Drain-Source Leakage Current | VDS=30V , VGS=0V , TJ=50 | 100 | nA | ||
| IDSS | Drain-Source Leakage Current | VDS=30V , VGS=0V , TJ=75 | 400 | nA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±6 | uA | ||
| On Characteristics | ||||||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=0.2A | 3.5 | Ω | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=0.1A | 4.0 | Ω | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.8 | 1.1 | 1.6 | V |
| VGS(th) | VGS(th) Temperature Coefficient | 3 | mV/ | |||
| Dynamic and switching Characteristics | ||||||
| Ciss | Input Capacitance | VDS=30V , VGS=0V , F=1MHz | 23 | pF | ||
| Coss | Output Capacitance | 16 | pF | |||
| Crss | Reverse Transfer Capacitance | 10 | pF | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | 200 | mA | ||
| ISM | Pulsed Source Current | 400 | mA | |||
| VSD | Diode Forward Voltage | VGS=0V , IS=0.2A , TJ=25 | 1.3 | V | ||
2509091208_GOODWORK-2SK3019_C41399457.pdf
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