N Channel Enhancement Mode MOSFET GOODWORK 80N03 with Excellent Package Heat Dissipation and Testing
Key Attributes
Model Number:
80N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
195pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.2nF@25V
Pd - Power Dissipation:
65W
Gate Charge(Qg):
47nC@10V
Mfr. Part #:
80N03
Package:
TO-252
Product Description
Product Overview
The 80N03 is an N-Channel Enhancement Mode MOSFET featuring Split Gate Trench MOSFET technology. It offers excellent package heat dissipation and a high-density cell design for low RDS(ON). This MOSFET is 100% UIS and VDS tested, making it suitable for DC-DC converters, power management functions, and industrial and motor drive applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
| On/Off States | BVDSS Drain-Source Breakdown Voltage (VGS=0V, ID=250A) | 30 | V | ||
| IDSS Zero Gate Voltage Drain Current (VDS=30V,VGS=0V) | 1 | A | |||
| IGSS Gate-Body Leakage Current (VGS=20V,VDS=0V) | 100 | nA | |||
| VGS(th) Gate Threshold Voltage (VDS=VGS,ID=250A) | 1.0 | 1.5 | 2.5 | V | |
| gFS Forward Transconductance (VDS=5V,ID=20A) | 10 | 20 | S | ||
| RDS(ON) Drain-Source On-State Resistance (VGS=10V, ID=20A) | 4.0 | 5.3 | m | ||
| RDS(ON) Drain-Source On-State Resistance (VGS=5V, ID=15A) | 6.5 | 8.5 | m | ||
| Dynamic Characteristics | Ciss Input Capacitance (VDS=15V,VGS=0V, f=1.0MHz) | 2200 | pF | ||
| Coss Output Capacitance | 312 | pF | |||
| Crss Reverse Transfer Capacitance | 195 | pF | |||
| Switching Times | td(on) Turn-on Delay Time (VGS=10V, VDS=15V, RL=0.75,RGEN=3) | 7 | nS | ||
| tr Turn-on Rise Time | 22 | nS | |||
| Switching Times | td(off) Turn-Off Delay Time | 30 | nS | ||
| tf Turn-Off Fall Time | 5 | nS | |||
| Total Gate Charge | Qg (VGS=10V, VDS=25V, ID=12A) | 47 | nC | ||
| Gate-Source Charge | Qgs | 8 | nC | ||
| Gate-Drain Charge | Qgd | 9 | nC | ||
| Source-Drain Diode Characteristics | ISD Source-Drain Current(Body Diode) | 80 | A | ||
| VSD Forward on Voltage (VGS=0V,IS=20A) | 1.2 | V | |||
| ABSOLUTE MAXIMUM RATINGS | VDS Drain-Source Voltage (VGS=0V | 30 | V | ||
| VGS Gate-Source Voltage (VDS=0V) | 20 | V | |||
| ID Drain Current-Continuous(Tc=25) (Note 1) | 80 | A | |||
| ID Drain Current-Continuous(Tc=100) | 55 | A | |||
| IDM Drain Current-Continuous@ Current-Pulsed (Note 2) | 230 | A | |||
| Maximum Power Dissipation | PD (Tc=25) | 65 | W | ||
| PD (Tc=100) | 32.5 | W | |||
| Avalanche energy | EAS (Note 3) | 90 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ||
| Thermal Resistance | RJC Junction-to-Case | 2 | /W |
2409272300_GOODWORK-80N03_C6068475.pdf
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