Power Management with GOODWORK 8205S Dual N Channel MOSFET Featuring Low RDSon and High Drain Current
Key Attributes
Model Number:
8205S
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
RDS(on):
25mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
125pF@10V
Number:
2 N-Channel
Input Capacitance(Ciss):
800pF@10V
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
8205S
Package:
SOT-23-6
Product Description
Product Overview
The 8205S is a Dual N-Channel MOSFET in a SOT23-6 package, featuring TrenchFET technology for excellent RDS(on), low gate charge, and high power and current handling capability. It is ideal for applications such as battery protection, load switching, and power management.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | VDS | 20 | V | |||
| VGS | ±12 | V | ||||
| ID | Continuous Drain Current | 5.0 | A | |||
| Static Characteristics | V(BR)DSS | VGS = 0V, ID =250µA | 20 | V | ||
| RDS(on) | VGS =4.5V, ID =4A | 25 | mΩ | |||
| RDS(on) | VGS =2.5V, ID =3A | 34 | mΩ | |||
| Dynamic Characteristics | Ciss | VDS =10V,VGS =0V,f =1MHz | 800 | pF | ||
| Coss | VDS =10V,VGS =0V,f =1MHz | 155 | pF | |||
| Crss | VDS =10V,VGS =0V,f =1MHz | 125 | pF | |||
| Switching Characteristics | td(on) | VDD=10V,VGS=4V, ID=1A,RGEN=10Ω | 18 | ns | ||
| tr | VDD=10V,VGS=4V, ID=1A,RGEN=10Ω | 4.8 | ns | |||
| td(off) | VDD=10V,VGS=4V, ID=1A,RGEN=10Ω | 43.5 | ns | |||
| tf | VDD=10V,VGS=4V, ID=1A,RGEN=10Ω | 20 | ns | |||
| Gate Charge | Qg | VDS =10V,VGS =4.5V,ID=4A | 11 | nC | ||
| Qgs | VDS =10V,VGS =4.5V,ID=4A | 2.2 | nC | |||
| Qgd | VDS =10V,VGS =4.5V,ID=4A | 2.5 | nC |
2410121546_GOODWORK-8205S_C22470939.pdf
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