Hangzhou Silan Microelectronics SVF20N60F featuring F Cell structure and low on resistance for power management
Key Attributes
Model Number:
SVF20N60F
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
280mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6.6pF
Number:
1 N-channel
Output Capacitance(Coss):
293pF
Input Capacitance(Ciss):
2.708nF
Pd - Power Dissipation:
74W
Gate Charge(Qg):
47nC@10V
Mfr. Part #:
SVF20N60F
Package:
TO-220
Product Description
Product Overview
The SVF20N60F is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. Engineered with an improved planar stripe cell and guard ring terminal, it offers reduced on-state resistance, superior switching performance, and enhanced high-energy pulse withstand capability in avalanche and commutation modes. This device is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Part Number: SVF20N60F
- Package: TO-220F-3L
- Marking: SVF20N60F
- Hazardous Substance Control: Pb free
- Packing Type: Tube
Technical Specifications
| Characteristics | Symbol | Test conditions | Min. | Typ. | Max. | Unit |
| ABSOLUTE MAXIMUM RATINGS | VDS | 600 | V | |||
| VGS | ±30 | V | ||||
| ID | TC=25°C | 20 | A | |||
| ID | TC=100°C | 12.6 | A | |||
| IDM | 80 | A | ||||
| PD | TC=25°C - Derate above 25°C | 74 (0.59 W/°C) | W | |||
| EAS | Single Pulsed Avalanche Energy (Note 1) | 1433 | mJ | |||
| THERMAL CHARACTERISTICS | RθJC | 1.69 | °C/W | |||
| RθJA | 62.5 | °C/W | ||||
| ELECTRICAL CHARACTERISTICS | BVDSS | VGS=0V, ID=250µA | 600 | V | ||
| IDSS | VDS=600V, VGS=0V | 1.0 | µA | |||
| IGSS | VGS=±30V, VDS=0V | ±100 | nA | |||
| VGS(th) | VGS=VDS, ID=250µA | 2.0 | 4.0 | V | ||
| RDS(on) | VGS=10V, ID=10A | 0.28 | 0.35 | Ω | ||
| Ciss | VDS=25V,VGS=0V,f=1.0MHz | 2708 | pF | |||
| Coss | 293 | pF | ||||
| Crss | 6.6 | pF | ||||
| td(on) | VDD=300V, ID=20A,RG=25Ω (Note2,3) | 27 | ns | |||
| tr | 44 | ns | ||||
| td(off) | 82 | ns | ||||
| tf | 44 | ns | ||||
| Qg | VDS=480V,ID=20A,VGS=10V (Note2,3) | 47 | nC | |||
| Qgs | 14 | nC | ||||
| Qgd | 15 | nC | ||||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | IS | Continuous Source Current | 20 | A | ||
| ISM | Pulsed Source Current | 80 | A | |||
| VSD | IS=20A, VGS=0V | 1.4 | V | |||
| Trr | IS=20A, VGS=0V, dIF/dt=100A/µs (Note 2) | 630 | ns | |||
| Qrr | 8.2 | µC |
2501091111_Hangzhou-Silan-Microelectronics-SVF20N60F_C601619.pdf
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