High Density Cell N Channel Power MOSFET GOODWORK 65N06 Featuring High ESD Capability and Stability
Key Attributes
Model Number:
65N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
65A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
16mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
90pF
Number:
1 N-channel
Output Capacitance(Coss):
300pF
Input Capacitance(Ciss):
1.5nF
Pd - Power Dissipation:
120W
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
65N06
Package:
TO-220
Product Description
Product Overview
The 65N06 is a high-density cell N-Channel Power MOSFET designed for power switching applications. It features ultra-low RDS(on), excellent thermal dissipation, and high ESD capability, making it suitable for hard-switched and high-frequency circuits, as well as uninterruptible power supplies. The device is fully characterized for avalanche voltage and current, ensuring good stability and uniformity.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 65 | A | |||
| Pulsed Drain Current | IDM | 240 | A | |||
| Single Pulsed Avalanche Energy | EAS | Tj=25,VDD=60V,L=0.5mH, RG=25 | 430 | mJ | ||
| Power Dissipation | PD | 120 | W | |||
| Thermal Resistance Junction to Ambient | RθJA | 62.5 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -50 | +150 | |||
| RDS(ON) TYP (at VGS=10V) | 16 | Ω | ||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 60 | V | ||
| Zero gate voltage drain current | IDSS | VDS =60V, VGS =0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID ≈250µA | 2.0 | 3.0 | V | |
| Static drain-source on-resistance | RDS(on) | VGS =10V, ID =20A | 23 | mΩ | ||
| Forward transconductance | gFS | VDS =25V, ID =20A | 17 | S | ||
| Input capacitance | Ciss | VDS =25V,VGS =0V, f =1MHz | 1500 | pF | ||
| Output capacitance | Coss | VDS =25V,VGS =0V, f =1MHz | 300 | pF | ||
| Reverse transfer capacitance | Crss | VDS =25V,VGS =0V, f =1MHz | 90 | pF | ||
| Total gate charge | Qg | VDS=30V, VGS=10V, ID=60A | 30 | nC | ||
| Gate-source charge | Qgs | VDS=30V, VGS=10V, ID=60A | 10 | nC | ||
| Gate-drain charge | Qgd | VDS=30V, VGS=10V, ID=60A | 11 | nC | ||
| Turn-on delay time | td(on) | VDD=30V,ID=2A, VGS=10V,RG=2.5Ω, RL=15Ω | 22 | ns | ||
| Turn-on rise time | tr | VDD=30V,ID=2A, VGS=10V,RG=2.5Ω, RL=15Ω | 70 | ns | ||
| Turn-off delay time | td(off) | VDD=30V,ID=2A, VGS=10V,RG=2.5Ω, RL=15Ω | 70 | ns | ||
| Turn-off fall time | tf | VDD=30V,ID=2A, VGS=10V,RG=2.5Ω, RL=15Ω | 35 | ns | ||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=40A | 1.3 | V | ||
| Continuous drain-source diode forward current | IS | 60 | A | |||
| Pulsed drain-source diode forward current | ISM | 240 | A |
2410121909_GOODWORK-65N06_C22399518.pdf
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