Power MOSFET Hangzhou Silan Microelectronics SVF4N150PF N channel transistor with low on state resistance
Key Attributes
Model Number:
SVF4N150PF
Product Custom Attributes
Drain To Source Voltage:
1.5kV
Current - Continuous Drain(Id):
4A
RDS(on):
5Ω@10V,1.3A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
12pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.034nF@25V
Pd - Power Dissipation:
73W
Mfr. Part #:
SVF4N150PF
Package:
TO-3PF
Product Description
Silan Microelectronics SVF4N150PF(P7)(F) N-CHANNEL MOSFET
The SVF4N150PF(P7)(F) is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced technology offers reduced on-state resistance, superior switching performance, and enhanced high-energy pulse handling in avalanche and commutation modes. It is widely used in power supply applications.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Hazardous Substance Control: Pb free
Technical Specifications
| Characteristics | Symbol | SVF4N150PF | SVF4N150P7 | SVF4N150F | Unit | |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 1500 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Drain Current (TC=25C) | ID | 4.0 | A | |||
| Drain Current (TC=100C) | ID | 2.5 | A | |||
| Drain Current Pulsed | IDM | 16 | A | |||
| Power Dissipation (TC=25C) | PD | 73 | 160 | 39 | W | |
| Derate above 25C | 0.49 | 1.28 | 0.3 | W/C | ||
| Single Pulsed Avalanche Energy (Note 1) | EAS | 485 | mJ | |||
| Operation Junction Temperature Range | TJ | -55+150 | C | |||
| Storage Temperature Range | Tstg | -55+150 | C | |||
| THERMAL CHARACTERISTICS | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 1.7 | 0.78 | 3.17 | C/W | |
| Thermal Resistance, Junction-to-Ambient | RJA | 50 | 50 | 62.5 | C/W | |
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain -Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 1500 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=1500V, VGS=0V | 10.0 | A | ||
| Gate-Source Leakage Current | IGSS | VGS=30V, VDS=0V | 500 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS= VDS, ID=250A | 3.0 | -- | 5.0 | V |
| Static Drain- Source On State Resistance | RDS(on) | VGS=10V, ID=1.3A | -- | 5.0 | 6.5 | |
| Input Capacitance | Ciss | VDS=25V,VGS=0V, f=1.0MHz | 1034 | pF | ||
| Output Capacitance | Coss | 91 | pF | |||
| Reverse Transfer Capacitance | Crss | 12 | pF | |||
| Turn-on Delay Time | td(on) | VDD=750VID=4A RG=25 (Note2,3) | 25 | ns | ||
| Turn-on Rise Time | tr | 51 | ns | |||
| Turn-off Delay Time | td(off) | 86 | ns | |||
| Turn-off Fall Time | tf | 46 | ns | |||
| Total Gate Charge | Qg | VDS=1200V, ID=4A, VGS=10V (Note 2,3) | 40 | nC | ||
| Gate-Source Charge | Qgs | 8.7 | nC | |||
| Gate-Drain Charge | Qg | 23 | nC | |||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Continuous Source Current | IS | 4.0 | A | |||
| Pulsed Source Current | ISM | 16 | A | |||
| Diode Forward Voltage | VSD | IS=4.0A,VGS=0V | 1.4 | V | ||
| Reverse Recovery Time | Trr | IS=4.0A,VGS=0V, dIF/dt=100A/s (Note 2) | 373 | ns | ||
| Reverse Recovery Charge | Qrr | 2.4 | C | |||
2501091111_Hangzhou-Silan-Microelectronics-SVF4N150PF_C601620.pdf
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