N channel power MOSFET Hangzhou Silan Microelectronics SVF18N65F designed for power management and motor control
Key Attributes
Model Number:
SVF18N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
480mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.8pF
Number:
1 N-channel
Output Capacitance(Coss):
233.3pF
Input Capacitance(Ciss):
2.7063nF
Pd - Power Dissipation:
54W
Gate Charge(Qg):
37.08nC@10V
Mfr. Part #:
SVF18N65F
Package:
TO-220
Product Description
Product Overview
The SVF18N65F/T/PN is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced technology minimizes on-state resistance, enhances switching performance, and provides superior withstand capability for high energy pulses in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: Hangzhou Silan Microelectronics Co., Ltd.
- Hazardous Substance Control: Pb free
Technical Specifications
| Characteristics | Symbol | Test conditions | Min. | Typ. | Max. | Unit | SVF18N65F | SVF18N65T | SVF18N65PN |
|---|---|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 650 | -- | -- | V | |||
| Drain-Source Leakage Current | IDSS | VDS=650V, VGS=0V | -- | -- | 1.0 | A | |||
| Gate-Source Leakage Current | IGSS | VGS=30V, VDS=0V | -- | -- | 100 | nA | |||
| Gate Threshold Voltage | VGS(th) | VGS= VDS, ID=250A | 3.0 | -- | 5.0 | V | |||
| Static Drain-Source On State Resistance | RDS(on) | VGS=10V, ID=9.0A | -- | 0.48 | 0.55 | ||||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHZ | -- | 2706.3 | -- | pF | |||
| Output Capacitance | Coss | -- | 233.3 | -- | pF | ||||
| Reverse Transfer Capacitance | Crss | -- | 1.8 | -- | pF | ||||
| Turn-on Delay Time | td(on) | VDD=325V, RG=25, ID=18A (Note 2,3) | -- | 58.07 | -- | ns | |||
| Turn-on Rise Time | tr | -- | 90.87 | -- | ns | ||||
| Turn-off Delay Time | td(off) | -- | 58.13 | -- | ns | ||||
| Turn-off Fall Time | tf | -- | 51.20 | -- | ns | ||||
| Total Gate Charge | Qg | VDS=520V, ID=18A, VGS=10V (Note 2,3) | -- | 37.08 | -- | nC | |||
| Gate-Source Charge | Qgs | -- | 17.66 | -- | nC | ||||
| Gate-Drain Charge | Qg d | -- | 8.81 | -- | nC | ||||
| Continuous Source Current | IS | Integral Reverse P-N Junction Diode in the MOSFET | -- | -- | 18 | A | |||
| Pulsed Source Current | ISM | -- | -- | 72 | A | ||||
| Diode Forward Voltage | VSD | IS=18A,VGS=0V | -- | -- | 1.4 | V | |||
| Reverse Recovery Time | Trr | IS=18A,VGS=0V, dIF/dt=100A/S | -- | 632.36 | -- | ns | |||
| Reverse Recovery Charge | Qrr | -- | 8.26 | -- | C | ||||
| Drain-Source Voltage | VDS | TC=25C UNLESS OTHERWISE NOTED | -- | -- | 650 | V | |||
| Gate-Source Voltage | VGS | TC=25C UNLESS OTHERWISE NOTED | -- | -- | 30 | V | |||
| Drain Current | ID | TC=25C | -- | -- | 18 | A | |||
| Drain Current | ID | TC=100C | -- | -- | 11.4 | A | |||
| Drain Current Pulsed | IDM | -- | -- | 72 | A | ||||
| Power Dissipation(TC=25C) | PD | -- | -- | 54 | W | ||||
| Derate above 25C | -- | -- | 0.43 | W/C | |||||
| Single Pulsed Avalanche Energy (Note 1) | EAS | -- | -- | 1008 | mJ | ||||
| Operation Junction Temperature Range | TJ | -55 | -- | +150 | C | ||||
| Storage Temperature Range | Tstg | -55 | -- | +150 | C | ||||
| Thermal Resistance, Junction-to-Case | RJC | -- | -- | 2.31 | C/W | ||||
| Thermal Resistance, Junction-to-Case | RJC | -- | -- | 0.55 | C/W | ||||
| Thermal Resistance, Junction-to-Case | RJC | -- | -- | 0.53 | C/W | ||||
| Thermal Resistance, Junction-to-Ambient | RJA | -- | -- | 62.5 | C/W | ||||
| Thermal Resistance, Junction-to-Ambient | RJA | -- | -- | 62.5 | C/W | ||||
| Thermal Resistance, Junction-to-Ambient | RJA | -- | -- | 50.0 | C/W |
2501091111_Hangzhou-Silan-Microelectronics-SVF18N65F_C601616.pdf
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