GOODWORK AO4421 GK P channel MOSFET optimized for low leakage current and power switching efficiency
Key Attributes
Model Number:
AO4421-GK
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
7A
RDS(on):
30mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
1 P-Channel
Output Capacitance(Coss):
73pF
Pd - Power Dissipation:
6.1W
Input Capacitance(Ciss):
1.08nF
Gate Charge(Qg):
11.8nC@4.5V
Mfr. Part #:
AO4421-GK
Package:
SOP-8
Product Description
Product Overview
The AO4421 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed and approved for full function reliability.
Product Attributes
- Brand: AO (implied by product name AO4421)
- Certifications: RoHS, Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | V | ||
| Reference to 25C , ID=-1mA | -0.03 | V/ C | ||||
| VGS=0V , ID=-250uA | -60 | V | ||||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-3A | 25 | 30 | mΩ | |
| VGS=-4.5V , ID=-2A | 30 | 40 | mΩ | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1 | -2.5 | V | |
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=25C | 1 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS= ±20V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-3A | 8.7 | S | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 15 | Ω | ||
| Qg | Total Gate Charge | VDS=-48V , VGS=-4.5V , ID=-3A | 11.8 | nC | ||
| 1.9 | ||||||
| 6.5 | ||||||
| Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | 1080 | pF | ||
| Coss | 73 | |||||
| Crss | 50 | |||||
| Ciss | F=1.0MHz | 1000 | pF | |||
| Coss | 100 | |||||
| Crss | 10 | |||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-3A | 25 | 30 | mΩ | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1 | -2.5 | V | |
| ID | Continuous Drain Current | TA=25C, VGS @ -10V | -7.0 | A | ||
| IDM | Pulsed Drain Current | -16.2 | A | |||
| EAS | Single Pulse Avalanche Energy | 69.7 | mJ | |||
| IAS | Avalanche Current | 44.4 | A | |||
| PD | Total Power Dissipation | TA=25C | 6.1 | W | ||
| RJA | Thermal Resistance Junction-Ambient | 85 | C/ W | |||
| RJC | Thermal Resistance Junction-Case | 36 | C/ W | |||
| TSTG | Storage Temperature Range | -55 | 150 | C | ||
| TJ | Operating Junction Temperature Range | -55 | 150 | C | ||
| IS | Continuous Source Current | VG=VD=0V , Force Current | -7.0 | A | ||
| ISM | Pulsed Source Current | -16.2 | A | |||
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25C | -1.2 | V |
2412021443_GOODWORK-AO4421-GK_C42402296.pdf
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