Hangzhou Silan Microelectronics SVF25NE50PN MOSFET featuring F Cell structure for power applications
Key Attributes
Model Number:
SVF25NE50PN
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
25A
RDS(on):
270mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9.5pF@25V
Input Capacitance(Ciss):
3.4665nF@25V
Pd - Power Dissipation:
260W
Gate Charge(Qg):
51.83nC@10V
Mfr. Part #:
SVF25NE50PN
Package:
TO-3P-3
Product Description
Product Overview
The SVF25NE50PN is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. It features an improved planar stripe cell and guard ring terminal designed to minimize on-state resistance, enhance switching performance, and provide superior high-energy pulse handling in avalanche and commutation modes. This device is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Hazardous Substance Control: Pb free
- Packing Type: Tube
Technical Specifications
| Characteristics | Symbol | Test conditions | Min. | Typ. | Max. | Unit | |
| ABSOLUTE MAXIMUM RATINGS | |||||||
| Drain-Source Voltage | VDS | 500 | V | ||||
| Gate-Source Voltage | VGS | ±30 | V | ||||
| Drain Current | ID | TC=25°C | 25.0 | A | |||
| Drain Current | ID | TC=100°C | 15.81 | A | |||
| Drain Current Pulsed | IDM | 100 | A | ||||
| Power Dissipation | PD | TC=25°C | 260 | W | |||
| Power Dissipation Derate | -Derate above 25°C | 2.08 | W/°C | ||||
| Single Pulsed Avalanche Energy | EAS | (Note 1) | 2560 | mJ | |||
| Operation Junction Temperature Range | TJ | -55 | +150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | |||
| THERMAL CHARACTERISTICS | |||||||
| Thermal Resistance, Junction-to-Case | RθJC | 0.48 | °C/W | ||||
| Thermal Resistance, Junction-to-Ambient | RθJA | 50 | °C/W | ||||
| ELECTRICAL CHARACTERISTICS | |||||||
| Drain -Source Breakdown Voltage | BVDSS | VGS=0V, ID=250µA | 500 | -- | -- | V | |
| Drain-Source Leakage Current | IDSS | VDS=500V, VGS=0V | -- | 1.0 | µA | ||
| Gate-Source Leakage Current | IGSS | VGS=±30V, VDS=0V | -- | ±100 | µA | ||
| Gate Threshold Voltage | VGS(th) | VGS= VDS, ID=250µA | 2.0 | -- | 4.0 | V | |
| On State Resistance | RDS(on) | VGS=10V, ID=12.5A | 0.18 | 0.27 | Ω | ||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHZ | 3466.5 | -- | pF | ||
| Output Capacitance | Coss | 413.0 | -- | pF | |||
| Reverse Transfer Capacitance | Crss | 9.5 | -- | pF | |||
| Turn-on Delay Time | td(on) | VDD=250V, VGS=10V, RG=25Ω, ID=25.0A (Note2,3) | 54.1 | -- | ns | ||
| Turn-on Rise Time | tr | 76.1 | -- | ns | |||
| Turn-off Delay Time | td(off) | 165.4 | -- | ns | |||
| Turn-off Fall Time | tf | 74.4 | -- | ns | |||
| Total Gate Charge | Qg | VDD=400V,VGS=10V, ID=25.0A (Note 2,3) | 51.83 | -- | nC | ||
| Gate-Source Charge | Qgs | 16.22 | -- | nC | |||
| Gate-Drain Charge | Qgd | 14.49 | -- | nC | |||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | |||||||
| Source Current | IS | Integral Reverse P-N Junction Diode in the MOSFET | -- | 25.0 | A | ||
| Pulsed Source Current | ISM | -- | 100.0 | A | |||
| Diode Forward Voltage | VSD | IS=25.0A,VGS=0V | -- | 1.4 | V | ||
| Reverse Recovery Time | Trr | IS=25.0A,VGS=0V, dIF/dt=100A/µS (Note2) | 626.13 | -- | ns | ||
| Reverse Recovery Charge | Qrr | 8.94 | -- | µC | |||
2501091110_Hangzhou-Silan-Microelectronics-SVF25NE50PN_C2897711.pdf
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