Switching MOSFET GOODWORK 5N65F Featuring 650V VDSS and 5A Drain Current for Power Factor Correction
Key Attributes
Model Number:
5N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
5A
RDS(on):
1.92Ω@10V,2.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
2.9pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
36W
Input Capacitance(Ciss):
623pF@25V
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
5N65F
Package:
ITO-220AB
Product Description
Product Overview
The 5N65F is an N-Channel Enhancement Mode MOSFET designed for high-performance switching applications. It offers a 650V breakdown voltage and 5A continuous drain current, with a low on-state resistance of 1.92 (Typ.) at VGS = 10V and ID = 2.5A. Key features include fast switching, improved dv/dt capability, and 100% avalanche tested, making it suitable for Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC) systems.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN | TYP | MAX | UNIT |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDSS | 650 | V | |||
| Gate-Source Voltage | VGSS | ±30 | V | |||
| Drain Current Continuous | ID | 5 | A | |||
| Drain Current Pulsed (Note 2) | IDM | 10 | A | |||
| Avalanche Energy Single Pulsed (Note 3) | EAS | 112 | mJ | |||
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 3.2 | V/ns | |||
| Power Dissipation | PD | (TC = 25°C) | 36 | W | ||
| Junction Temperature | TJ | -55 | +150 | °C | ||
| Storage Temperature | TSTG | -55 | +150 | °C | ||
| OFF CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID= 250µA | 650 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=650V, VGS=0V | 10 | µA | ||
| Gate-Source Leakage Current Forward | IGSS | VGS=30V, VDS=0V | 100 | nA | ||
| Gate-Source Leakage Current Reverse | IGSS | VGS=-30V, VDS=0V | -100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250µA | 2.0 | 4.0 | V | |
| Static Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=2.5A | 1.92 | 2.2 | Ω | |
| DYNAMIC CHARACTERISTICS | ||||||
| Input Capacitance | CISS | VGS=0V, VDS=25V, f=1.0 MHz | 623 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS=25V, f=1.0 MHz | 62 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS=25V, f=1.0 MHz | 2.9 | pF | ||
| SWITCHING CHARACTERISTICS | ||||||
| Total Gate Charge (Note 1) | QG | VDS=100V, VGS=10V, ID=2.0A | 15 | nC | ||
| Gate-Source Charge | QGS | VDS=100V, VGS=10V, ID=2.0A | 5.6 | nC | ||
| Gate-Drain Charge | QGD | VDS=100V, VGS=10V, ID=2.0A | 2.5 | nC | ||
| Turn-on Delay Time (Note 1) | tD(ON) | VDS=30V, VGS=10V, ID=0.5A, RG=25Ω | 4.4 | ns | ||
| Rise Time | tR | VDS=30V, VGS=10V, ID=0.5A, RG=25Ω | 24 | ns | ||
| Turn-off Delay Time | tD(OFF) | VDS=30V, VGS=10V, ID=0.5A, RG=25Ω | 122 | ns | ||
| Fall-Time | tF | VDS=30V, VGS=10V, ID=0.5A, RG=25Ω | 25 | ns | ||
| SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Maximum Body-Diode Continuous Current | IS | 5 | A | |||
| Maximum Body-Diode Pulsed Current | ISM | 10 | A | |||
| Drain-Source Diode Forward Voltage (Note 1) | VSD | VGS=0V, IS=5.0A | 1.4 | V | ||
| Reverse Recovery Time (Note 1) | trr | VGS=0V, IS=5.0A, dIF/dt=100A/µs | 328 | ns | ||
| Reverse Recovery Charge | Qrr | VGS=0V, IS=5.0A, dIF/dt=100A/µs | 2.65 | µC | ||
2410121817_GOODWORK-5N65F_C6068472.pdf
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