Durable power MOSFET GREENMICRO GM4N60GT with low leakage current and fast switching characteristics
Key Attributes
Model Number:
GM4N60GT
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
2A
RDS(on):
2.7Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
1 N-channel
Pd - Power Dissipation:
-
Input Capacitance(Ciss):
-
Output Capacitance(Coss):
-
Gate Charge(Qg):
-
Mfr. Part #:
GM4N60GT
Package:
TO-220F
Product Description
Product Overview
The 4N60 is a high voltage MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is suitable for use in power supplies, PWM motor controls, high-efficiency DC to DC converters, and bridge circuits.
Product Attributes
- Brand: GREENMICRO
- Product Model: 4N60
- Revision: V1.3
Technical Specifications
| Parameter | Description | Min. | Typ. | Max. | Unit | Test Condition |
| V(BR)DSS | Drain-Source Breakdown Voltage | 650 | V | VGS =0V, ID =250A | ||
| RDS(ON) | Static Drain-Source On-Resistance | 2.7 | 3.1 | VGS =10V, ID =2 A | ||
| VGS(th) | Gate Threshold Voltage | 2 | 3 | 4 | V | VDS = VGS , ID =250A |
| IDSS | Drain-to-Source Leakage Current | 1 | A | VDS =650V, VGS =0V | ||
| IGSS | Gate-Body Leakage Current | 100 | nA | VDS =0V, VGS =30V | ||
| Vsd | Drain-Source Diode Forward Voltage | 1.2 | V | VGS =0V, IS =4A | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 150 | Max |
Ordering Information
| Product Model | Package Type | Marking | Packing | Packing Qty |
| GM4N60GT | TO-220F | 4N60 B82 | TUBE | 1000PCS/BOX |
| GM4N60GR | TO-252 | 4N60 B82 | REEL | 2500PCS/REEL |
| 4N60GT | TO-220F | 4N60 G282 | TUBE | 1000PCS/BOX |
| 4N60GR | TO-252 | 4N60 GB82 | REEL | 2500PCS/REEL |
2507171700_GREENMICRO-GM4N60GT_C49329008.pdf
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