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quality NPN Bipolar Transistor Guangdong Hottech MMBT5551 600mA Collector Current Surface Mount SOT23 Package factory
quality NPN Bipolar Transistor Guangdong Hottech MMBT5551 600mA Collector Current Surface Mount SOT23 Package factory

NPN Bipolar Transistor Guangdong Hottech MMBT5551 600mA Collector Current Surface Mount SOT23 Package

Key Attributes
Model Number: MMBT5551
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-
Mfr. Part #:
MMBT5551
Package:
SOT-23
Product Description

MMBT5551 NPN Bipolar Transistor

The MMBT5551 is an NPN bipolar transistor designed for medium power amplification and switching applications. It is complementary to the MMBT5401 and comes in a surface-mount SOT-23 package.

Product Attributes

  • Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
  • Model: MMBT5551
  • Type: NPN Bipolar Transistor
  • Complementary to: MMBT5401
  • Package: SOT-23
  • Case Material: Molded Plastic
  • UL Flammability Classification Rating: 94V-0
  • Weight: 0.008 grams (approximate)

Technical Specifications

Parameter Symbol Value Unit Conditions
Collector-Base Voltage VCBO 180 V TA = 25C unless otherwise noted
Collector-Emitter Voltage VCEO 160 V TA = 25C unless otherwise noted
Emitter-Base Voltage VEBO 6 V TA = 25C unless otherwise noted
Collector Current IC 600 mA TA = 25C unless otherwise noted
Collector Power Dissipation PC 300 mW TA = 25C unless otherwise noted
Thermal Resistance Junction to Ambient RJA 416 C/W TA = 25C unless otherwise noted
Junction Temperature TJ 150 C TA = 25C unless otherwise noted
Storage Temperature TSTG -55 ~+150 C TA = 25C unless otherwise noted
Collector-base breakdown voltage V(BR)CBO 180 V IC=100uAIE=0
Collector-emitter breakdown voltage V(BR)CEO 160 V IC=1mAIB=0
Emitter-base breakdown voltage V(BR)EBO 6 V IE=10uAIC=0
Collector cut-off current ICBO 0.05 uA VCB=120V, IE=0
Emitter cut-off current IEBO 0.05 uA VEB=4V, IC=0
DC current gain (hFE1) hFE1 80 - VCE=5V, IC=1mA
DC current gain (hFE2) hFE2 100 - 300 - VCE=5V, IC=10mA
DC current gain (hFE3) hFE3 50 - VCE=5V, IC=50mA
Collector-emitter saturation voltage (VCE(sat)) VCE(sat) 0.15 V IC=10mAIB=1mA
Collector-emitter saturation voltage (VCE(sat)) VCE(sat) 0.2 V IC=50mAIB=5mA
Base-emitter saturation voltage (VBE(sat)) VBE(sat) 1 V IC=10mAIB=1mA
Base-emitter saturation voltage (VBE(sat)) VBE(sat) 1 V IC=50mAIB=5mA
Transition frequency fT 100 - 300 MHz VCE=10V,IC=10mA,f=100MHz
Collector output capacitance Cob 6 pF VCE=10V, IE=0, f=1MHz

2410121759_Guangdong-Hottech-MMBT5551_C181136.pdf

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