N Channel Super Junction MOSFET GOODWORK 380R65 with 650V Drain Source Voltage and Low On Resistance
Key Attributes
Model Number:
380R65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
11A
RDS(on):
380mΩ@10V
Operating Temperature -:
-55℃~+150℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
29pF
Number:
1 N-channel
Output Capacitance(Coss):
518pF
Input Capacitance(Ciss):
945pF
Pd - Power Dissipation:
32W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
380R65
Package:
TO-252
Product Description
Product Overview
The 380R65 is an N-Channel Super Junction MOSFET designed for high-voltage applications. It features a high drain-source voltage rating of 650V, low on-resistance (RDS(on)=0.38 Max.), and ultra-low gate charge (Qg=20nC Typ.). This device is 100% avalanche tested and RoHS compliant, making it suitable for various power electronics applications.
Product Attributes
- Certifications: RoHS compliant
Technical Specifications
| Characteristic | Symbol | Rating Unit | Test Condition | Min. | Typ. | Max. |
| Drain-Source voltage | VDSS | V | @TJ=150C | 650 | ||
| Gate-Source voltage | VGSS | V | 30 | |||
| Drain current (DC) | ID | A | Tc=25C | 11 | ||
| Drain current (DC) | ID | A | Tc=100C | 7 | ||
| Drain current (Pulsed) | IDM | A | Note 1 | 44 | ||
| Single pulsed avalanche energy | EAS | mJ | Note 2 | 135 | ||
| Repetitive avalanche current | IAR | A | Note 1 | 5 | ||
| Repetitive avalanche energy | EAR | mJ | Note 1 | 63.2 | ||
| Power dissipation | PD | W | 32 | |||
| Diode dv/dt ruggedness | dv/dt | V/ns | Note 3 | 15 | ||
| MOSFET dv/dt ruggedness | dv/dt | V/ns | Note 4 | 50 | ||
| Junction temperature | TJ | C | 150 | |||
| Storage temperature range | Tstg | C | -55 | 150 | ||
| Thermal resistance, junction to case | Rth(j-c) | C/W | 3.9 | |||
| Thermal resistance, junction to ambient | Rth(j-a) | C/W | 62.5 | |||
| Drain-source breakdown voltage | BVDSS | V | ID=250uA, VGS=0 | 650 | ||
| Gate threshold voltage | VGS(th) | V | ID=250uA, VDS=VGS | 2 | 3 | 4 |
| Drain-source cut-off current | IDSS | uA | VDS=650V, VGS=0V | 1 | ||
| Drain-source cut-off current | IDSS | uA | VDS=650V, TJ=125C | 100 | ||
| Gate leakage current | IGSS | nA | VDS=0V, VGS=30V | 100 | ||
| Drain-source on-resistance | RDS(ON) | VGS=10V, ID=5.5A | 0.31 | 0.38 | ||
| Internal gate resistance | Rg | f=1MHz, Open drain | 21 | 28 | ||
| Input capacitance | Ciss | pF | VDS=25V, VGS=0V, f=1MHz | 629 | 787 | 945 |
| Output capacitance | Coss | pF | VDS=25V, VGS=0V, f=1MHz | 344 | 431 | 518 |
| Reverse transfer capacitance | Crss | pF | VDS=25V, VGS=0V, f=1MHz | 19 | 24 | 29 |
| Turn-on delay time | td(on) | ns | VDS=350V, ID=11A, RG=25, Note 3 | 17 | 25 | |
| Rise time | tr | ns | VDS=350V, ID=11A, RG=25, Note 3 | 14 | 24 | |
| Turn-off delay time | td(off) | ns | VDS=350V, ID=11A, RG=25, Note 3 | 40 | 55 | |
| Fall time | tf | ns | VDS=350V, ID=11A, RG=25, Note 3 | 5 | 8 | |
| Total gate charge | Qg | nC | VDS=400V, VGS=10V, ID=7A, Note 4 | 20 | 25 | |
| Gate-source charge | Qgs | nC | VDS=400V, VGS=10V, ID=7A, Note 4 | 6.5 | 10 | |
| Gate-drain charge | Qgd | nC | VDS=400V, VGS=10V, ID=7A, Note 4 | 5 | 10 | |
| Source current (DC) | IS | A | Integral reverse diode in the MOSFET | 11 | ||
| Source current (Pulsed) | ISM | A | 44 | |||
| Forward voltage | VSD | V | VGS=0V, IS=11A | 1.2 | ||
| Reverse recovery time | trr | ns | IS=11A, VGS=0V, dIS/dt=100A/us, Note 3,4 | 326 | 450 | |
| Reverse recovery charge | Qrr | uC | IS=11A, VGS=0V, dIS/dt=100A/us, Note 3,4 | 2.8 | 4.5 |
2412061650_GOODWORK-380R65_C22470942.pdf
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