power MOSFET GOODWORK 15N10 featuring low RDSon and gate charge for N channel synchronous buck converter designs
Key Attributes
Model Number:
15N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
RDS(on):
85mΩ@10V,5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
33pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
765pF@25V
Pd - Power Dissipation:
30W
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
15N10
Package:
TO-252
Product Description
Product Overview
The 15N10 is a high-performance N-channel Fast Switching MOSFET featuring extreme high cell density. It offers excellent RDS(on) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key advantages include super low gate charge, green device availability, excellent Cdv/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| BVDSS | Drain-Source Voltage | 100 | V | |||
| RDSON | Static Drain-Source on-Resistance | VGS=10V, ID=5A | 85 | 110 | m | |
| ID | Continuous Drain Current | TC=25, VGS @ 10V | 15 | A | ||
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 15 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 8 | A | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V | 3 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V | 2.4 | A | |||
| IDM | Pulsed Drain Current | 20 | A | |||
| EAS | Single Pulse Avalanche Energy | 6.1 | mJ | |||
| IAS | Avalanche Current | 10 | A | |||
| PD@TC=25 | Total Power Dissipation | 30 | W | |||
| PD@TA=25 | Total Power Dissipation | 2 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case | --- | 6.6 | /W | ||
| Electrical Characteristics | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 100 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=100V, VGS=0V | - | - | 1.0 | A |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS=20V | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 1.0 | 1.5 | 2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS=10V, ID=5A | - | 85 | 110 | m |
| RDS(on) | Static Drain-Source on-Resistance | VGS=4.5V, ID=3A | - | 96 | 140 | m |
| Ciss | Input Capacitance | VDS=25V, VGS=0V, f=1.0MHz | - | 765 | - | pF |
| Coss | Output Capacitance | - | 38 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 33 | - | pF | |
| Qg | Total Gate Charge | VDS=50V, ID=2A, VGS=10V | - | 18 | - | nC |
| Qgs | Gate-Source Charge | - | 2.5 | - | nC | |
| Qgd | Gate-Drain(Miller) Charge | - | 4 | - | nC | |
| td(on) | Turn-on Delay Time | VDS=50V, ID=3A, RG=1.8, VGS=10V | - | 7.5 | - | ns |
| tr | Turn-on Rise Time | - | 6 | - | ns | |
| td(off) | Turn-off Delay Time | - | 21 | - | ns | |
| tf | Turn-off Fall Time | - | 9 | - | ns | |
| Drain-Source Diode Characteristics | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | 10 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | 40 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS=10A | - | - | 1.2 | V |
| trr | Body Diode Reverse Recovery Time | IF=3A, dI/dt=100A/s | - | 21 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | - | 22 | - | nC | |
2408021728_GOODWORK-15N10_C5807889.pdf
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