NPN transistor Guangdong Hottech BC848C plastic package designed for audio frequency circuits general purpose
Key Attributes
Model Number:
BC848C
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-
Mfr. Part #:
BC848C
Package:
SOT-23
Product Description
Product Overview
General-purpose NPN transistors in a plastic-encapsulate package, designed for AF applications. These transistors offer high collector current, high current gain, and low collector-emitter saturation voltage, making them suitable for various audio frequency circuits.
Product Attributes
- Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD
- Origin: China (implied by brand)
- Encapsulation: Plastic
- Package: SOT-23
- Transistor Type: NPN
Technical Specifications
| Model | Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| BC846 | Collector-Base Voltage | VCBO | 80 | V | |||
| Collector-Emitter Voltage | VCEO | 65 | V | ||||
| Emitter-Base Voltage | VEBO | 6 | V | ||||
| Collector Current -Continuous | IC | 0.1 | A | ||||
| Collector Power Dissipation | PC | 0.2 | W | ||||
| Junction Temperature | TJ | 150 | C | ||||
| Storage Temperature | Tstg | -55 | +150 | C | |||
| Collector-base breakdown voltage | VCBO | IC= 10A, IE=0 | 80 | V | |||
| Collector-emitter breakdown voltage | VCEO | IC= 10mA, IB=0 | 65 | V | |||
| Collector cut-off current | ICBO | VCB=70 V , IE=0 | 0.1 | A | |||
| Collector cut-off current | ICEO | VCE=60 V , IB=0 | 0.1 | A | |||
| BC847 | Collector-Base Voltage | VCBO | 50 | V | |||
| Collector-Emitter Voltage | VCEO | 45 | V | ||||
| Emitter-Base Voltage | VEBO | 6 | V | ||||
| Collector Current -Continuous | IC | 0.1 | A | ||||
| Collector Power Dissipation | PC | 0.2 | W | ||||
| Junction Temperature | TJ | 150 | C | ||||
| Storage Temperature | Tstg | -55 | +150 | C | |||
| Collector-base breakdown voltage | VCBO | IC= 10A, IE=0 | 50 | V | |||
| Collector-emitter breakdown voltage | VCEO | IC= 10mA, IB=0 | 45 | V | |||
| Collector cut-off current | ICBO | VCB=50 V , IE=0 | 0.1 | A | |||
| Collector cut-off current | ICEO | VCE=45 V , IB=0 | 0.1 | A | |||
| BC848 | Collector-Base Voltage | VCBO | 30 | V | |||
| Collector-Emitter Voltage | VCEO | 30 | V | ||||
| Emitter-Base Voltage | VEBO | 6 | V | ||||
| Collector Current -Continuous | IC | 0.1 | A | ||||
| Collector Power Dissipation | PC | 0.2 | W | ||||
| Junction Temperature | TJ | 150 | C | ||||
| Storage Temperature | Tstg | -55 | +150 | C | |||
| Collector-base breakdown voltage | VCBO | IC= 10A, IE=0 | 30 | V | |||
| Collector-emitter breakdown voltage | VCEO | IC= 10mA, IB=0 | 30 | V | |||
| Collector cut-off current | ICBO | VCB=30 V , IE=0 | 0.1 | A | |||
| Collector cut-off current | ICEO | VCE=30 V , IB=0 | 0.1 | A | |||
| All Models | Emitter cut-off current | IEBO | VEB=5 V , IC=0 | 0.1 | A | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=100mA, IB= 5mA | 0.5 | V | |||
| Base-emitter saturation voltage | VBE(sat) | IC=100mA, IB= 5mA | 1.1 | V | |||
| Transition frequency | fT | VCE= 5 V, IC= 10mA f=100MHz | 100 | MHz | |||
| BC846A,847A,848A | DC current gain | hFE | VCE= 5V, IC= 2mA | 110 | |||
| BC846B,847B,848B | DC current gain | hFE | VCE= 5V, IC= 2mA | 200 | |||
| BC847C,BC848C | DC current gain | hFE | VCE= 5V, IC= 2mA | 420 | |||
| All Models | Collector output capacitance | Cob | VCB=10V,f=1MHz | 4.5 | pF |
2409302232_Guangdong-Hottech-BC848C_C181143.pdf
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