General Purpose NPN Transistor High Diode SS8050 in SOT23 Package with 25V Collector Emitter Voltage
Key Attributes
Model Number:
SS8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
SS8050
Package:
SOT-23
Product Description
Product Overview
The Y1 SS8050 is a high diode semiconductor NPN transistor in a SOT-23 plastic-encapsulated package. It is designed for general-purpose applications and is complementary to the SS8550 transistor. Key features include a collector current of 1.5A and a collector-emitter voltage of 25V.
Product Attributes
- Brand: High Diode Semiconductor
- Package Type: SOT-23
- Transistor Type: NPN
- Complementary to: SS8550
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | V | 40 | V | |||
| Collector-Emitter Voltage | VCEO | 25 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current | IC | 1.5 | A | |||
| Collector Power Dissipation | PC | 300 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC= 100A, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 0.1mA, IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=40V, IE=0 | 0.1 | A | ||
| Collector cut-off current | ICEO | VCE=20V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB= 5V, IC=0 | 0.1 | A | ||
| DC current gain (1) | hFE(1) | VCE=1V, IC= 100mA | 120 | 400 | ||
| DC current gain (2) | hFE(2) | VCE=1V, IC= 800mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=800mA, IB= 80mA | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=800mA, IB= 80mA | 1.2 | V | ||
| Transition frequency | fT | VCE=10V, IC= 50mA, f=30MHz | 100 | MHz |
2410121326_High-Diode-SS8050_C466631.pdf
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