NPN Bipolar Transistor Guangdong Hottech MMBTA06 in SOT23 Package Suitable for Switching Applications
Key Attributes
Model Number:
MMBTA06
Product Custom Attributes
Emitter-Base Voltage(Vebo):
4V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
80V
Mfr. Part #:
MMBTA06
Package:
SOT-23
Product Description
Product Overview
The MMBTA06 is an NPN bipolar transistor designed for switching and amplifier applications. It is a surface mount device in a SOT-23 package, offering a complementary option to the MMBTA56. This device is manufactured by GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.
Product Attributes
- Brand: HOTTECH
- Origin: GUANGDONG
- Package: SOT-23
- Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Complementary to: MMBTA56
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Base Voltage | VCBO | 80 | V | |
| Collector-Emitter Voltage | VCEO | 80 | V | |
| Emitter-Base Voltage | VEBO | 4 | V | |
| Collector Current | IC | 500 | mA | |
| Collector Power Dissipation | PC | 300 | mW | |
| Thermal Resistance Junction To Ambient | RJA | 416 | C/W | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| Collector-base breakdown voltage | V(BR)CBO | 80 | V | IC=100uAIE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | 80 | V | IC=1mAIB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | 4 | V | IE=100uAIC=0 |
| Collector cut-off current | ICBO | 0.1 | uA | VCB=80V, IE=0 |
| Collector cut-off current | ICEO | 1 | uA | VCE=80V, IE=0 |
| Emitter cut-off current | IEBO | 0.1 | uA | VEB=3V, IC=0 |
| DC current gain | hFE1 | 100-400 | VCE=1V, IC=10mA | |
| DC current gain | hFE2 | 100 | VCE=1V, IC=100mA | |
| Collector-emitter saturation voltage | VCE(sat) | 0.25 | V | IC=100mAIB=10mA |
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC=100mAIB=10mA |
| Transition frequency | fT | 100 | MHz | VCE=2V,IC=10mA,f=100MHz |
2410010201_Guangdong-Hottech-MMBTA06_C5364248.pdf
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